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Datasheet MM8030-2600B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MM8030-2600B | COAXIAL CONNECTOR Preliminary Specification of COAXIAL CONNECTOR Preliminary SPEC No. : NMM04-PV0001A Part Number : MM8030-2600B/RJ3/RK0 SPECIFICATION 1. PART NUMBER B>A> Part Number MM8030-2600B MM8030-2600RJ3 MM8030-2600RK0 2. MECHANICAL
2.1
a. Di 0.5
Written by : T. Kuriyama Checked by : H. Aoki Date : 10/Jun./20 |  Murata | connector |
MM8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MM8000 | HIGH FREQUENCY TRANSISTOR MM8000 MM8001 MM8002
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
@Total Device Dissipation Jq = 25°C
Derate above 25°C Operating and Storage Junction
Tempe  Motorola Semiconductors transistor | | |
| 2 | MM8001 | HIGH FREQUENCY TRANSISTOR MM8000 MM8001 MM8002
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
@Total Device Dissipation Jq = 25°C
Derate above 25°C Operating and Storage Junction
Tempe Motorola Semiconductors transistor | | |
| 3 | MM8002 | HIGH FREQUENCY TRANSISTOR MM8000 MM8001 MM8002
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
@Total Device Dissipation Jq = 25°C
Derate above 25°C Operating and Storage Junction
Tempe Motorola Semiconductors transistor | | |
| 4 | MM8006 | Diode, Rectifier American Microsemiconductor diode | | |
| 5 | MM8006 | NPN SILICON HIGH FREQUENCY TRANSISTOR
MM8006
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI MM8006 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications.
PACKAGE STYLE TO-72
MAXIMUM RATINGS
IC VCBO PDISS TJ TSTG 50 mA 15 V 600 mW @ TC = 25 °C -65 °C to +200 °C -65 °C to +  ASI transistor | | |
| 6 | MM8007 | Diode, Rectifier American Microsemiconductor diode | | |
| 7 | MM8009 | HIGH FREQUENCY TRANSISTOR MM8009
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
Iff
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 2 Motorola Semiconductors transistor | |
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