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AP86T02GJ PDF даташит

Спецификация AP86T02GJ изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «(AP86T02GH/J) N-CHANNEL ENHANCEMENT MODE POWER MOSFET».

Детали детали

Номер произв AP86T02GJ
Описание (AP86T02GH/J) N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP86T02GJ Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP86T02GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
G
D
S
BVDSS
RDS(ON)
ID
25V
6mΩ
75A
Description
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP86T02GJ) is
available for low-profile applications.
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
G
D
S
Rating
25
+20
75
62
300
75
0.5
-55 to 175
-55 to 175
TO-251(J)
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2
110
Units
/W
/W
1
200808159
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AP86T02GJ Даташит, Описание, Даташиты
AP86T02GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=175oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=25V, VGS=0V
VDS=20V, VGS=0V
VGS=+20V
ID=30A
VDS=20V
VGS=4.5V
VDS=10V
ID=30A
RG=3.3Ω,VGS=10V
RD=0.3Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
25 -
-V
- 0.02 - V/
- - 6 m
- - 10 m
1 - 3V
- 42 -
S
- - 1 uA
- - 250 uA
- - +100 nA
- 23 37 nC
-5
nC
- 14
nC
- 11 - ns
- 105 -
ns
- 32 - ns
- 8 - ns
- 1830 2930 pF
- 490 - pF
- 360 - pF
- 1.1 1.6
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 28 - ns
- 15 - nC
Drain-Source Avalanche Ratings
Symbol
EAS
Parameter
Drain-Source Avalanche Energy4
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A .
4.Single Pulse Test.
Test Conditions
ID=24A, VDD=20V, L=100uH
Min. Typ. Max. Units
- - 29 mJ
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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AP86T02GJ Даташит, Описание, Даташиты
200
10V
T C =25 o C
7.0V
5.0V
150 4.5V
100
50 V G =3.0V
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
16
I D =30A
T c =25
12
8
4
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
20 T j =175 o C
10
T j =25 o C
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP86T02GH/J
120
10V
T C = 175 o C
7.0V
5.0V
90 4.5V
60
V G = 3 .0V
30
0
01234
V DS , Drain-to-Source Voltage (V)
5
Fig 2. Typical Output Characteristics
1.8
I D =45A
V G =10V
1.4
1.0
0.6
25 50 75 100 125 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
175
0.8
0.4
0.0
25 50 75 100 125 150 175
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
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