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даташит IKW15N120T2 PDF ( Datasheet )

IKW15N120T2 Datasheet Download - Infineon

Номер произв IKW15N120T2
Описание IGBT
Производители Infineon
логотип Infineon логотип 

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IKW15N120T2 Даташит, Описание, Даташиты
IKW15N120T2
TrenchStop® 2nd generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology
with soft, fast recovery anti-parallel Emitter Controlled Diode
C
Short circuit withstand time 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® 2nd generation for 1200 V applications offers :
G
E
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Easy paralleling capability due to positive temperature coefficient
in VCE(sat)
Low EMI
PG-TO-247-3
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE Diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW15N120T2 1200V 15A
1.75V
175C K15T1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current (Tj = 150°C)
TC = 25C
TC = 110C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 175C
Diode forward current (Tj = 150°C)
TC = 25C
TC = 110C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 600V, Tj, start 175C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Wavesoldering only, temperature on leads only
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
30
15
60
60
25
15
60
20
10
235
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.2 12.06.2013







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IKW15N120T2 Даташит, Описание, Даташиты
IKW15N120T2
TrenchStop® 2nd generation Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction case
Diode thermal resistance,
junction case
Thermal resistance,
junction ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.63
1.12
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Symbol
Conditions
V(BR)CES VGE=0V, IC=500µA
VCE(sat) VGE = 15V, IC=15A
Tj=25C
Tj=150C
Tj=175C
VF VGE=0V, IF=15A
Tj=25C
Tj=150C
Tj=175C
VGE(th)
ICES
IC=0.6mA,VCE=VGE
VCE=1200V,
VGE=0V
Tj=25C
Tj=150C
Tj=175C
IGES
gfs
VCE=0V,VGE=20V
VCE=20V, IC=15A
min.
1200
-
-
-
-
-
-
5.2
-
-
-
-
-
Value
typ.
-
1.7
2.1
2.2
1.75
1.8
1.75
5.8
-
-
-
-
8
Unit
max.
-V
2.2
-
-
2.2
-
-
6.4
mA
0.4
4.0
20
600 nA
-S
IFAG IPC TD VLS
2
Rev. 2.2 12.06.2013







No Preview Available !

IKW15N120T2 Даташит, Описание, Даташиты
IKW15N120T2
TrenchStop® 2nd generation Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=15A
VGE=15V
VGE=15V,tSC10s
VCC = 600V,
Tj,start = 25C
Tj,start = 175C
-
-
-
-
-
-
1000
100
56
93
13
82
60
- pF
-
-
- nC
- nH
-A
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=600V,IC=15A,
VGE=0/15V,
RG=41.8,
L2)=126nH,
C2)=34pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25C,
VR=600V, IF=15A,
diF/dt=450A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
32
25
362
95
1.25
0.8
2.05
300
1.3
10
215
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
µC
A
- A/s
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
3
Rev. 2.2 12.06.2013










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