DataSheet26.com

даташит SGW15N120 PDF ( Datasheet )

SGW15N120 Datasheet Download - Infineon

Номер произв SGW15N120
Описание Fast IGBT
Производители Infineon
логотип Infineon логотип 

1Page
		

No Preview Available !

SGW15N120 Даташит, Описание, Даташиты
SGP15N120 SGP15N120
SGW15N120
Fast IGBT in NPT-technology
40% lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK) P-TO-247-3-1
(TO-263AB)
(TO-247AC)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGP15N120
SGB15N120
SGW15N120
VCE
1200V
IC
15A
Eoff
1.5mJ
Tj
150°C
Package
TO-220AB
TO-263AB(D2PAK)
TO-247AC
Ordering Code
Q67040-S4274
Q67040-S4275
Q67040-S4276
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 15A, VCC = 50V, RGE = 25, start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, 100VVCC 1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
-
Value
1200
30
15
52
52
±20
85
10
198
-55...+150
260
Unit
V
A
V
mJ
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Jul-02
Free Datasheet http://www.datasheet4u.com/







No Preview Available !

SGW15N120 Даташит, Описание, Даташиты
SGP15N120 SGP15N120
SGW15N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
Symbol
Conditions
RthJC
RthJA
RthJA
TO-220AB
TO-247AC
TO-263AB(D2PAK)
Max. Value
0.63
62
40
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
VGE=0V,
IC=1000µA
VGE = 15V, IC=15A
Tj=25°C
Tj=150°C
IC=600µA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=15A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=15A
VGE=15V
TO-220AB
TO-247AC
VGE=15V,tSC5µs
100VVCC1200V,
Tj 150°C
min.
1200
2.5
-
3
-
-
-
-
-
-
-
-
-
Value
typ.
-
3.1
3.7
4
-
-
-
11
1250
100
65
130
7
13
145
Unit
max.
-V
3.6
4.3
5
µA
200
800
100 nA
-S
1500
120
80
175
pF
nC
- nH
-A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Jul-02
Free Datasheet http://www.datasheet4u.com/







No Preview Available !

SGW15N120 Даташит, Описание, Даташиты
SGP15N120 SGP15N120
SGW15N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=800V,IC=15A,
VGE=15V/0V,
RG=33,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
18
23
580
22
1.1
0.8
1.9
Unit
max.
24 ns
30
750
29
1.5 mJ
1.1
2.6
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C
VCC=800V,
IC=15A,
VGE=15V/0V,
RG=33,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
38
30
652
31
1.9
1.5
3.4
Unit
max.
46 ns
36
780
37
2.3 mJ
2.0
4.3
1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
Power Semiconductors
3
Jul-02
Free Datasheet http://www.datasheet4u.com/










Всего страниц 12 Pages
Скачать PDF[ SGW15N120.PDF Даташит ]

Ссылка Поделиться


Related Datasheets

Номер в каталогеОписаниеПроизводители
SGW15N120Fast IGBTInfineon
Infineon

Номер в каталоге Описание Производители
6MBP200RA-060

Intelligent Power Module

Fuji Electric
Fuji Electric
ADF41020

18 GHz Microwave PLL Synthesizer

Analog Devices
Analog Devices
AN-SY6280

Low Loss Power Distribution Switch

Silergy
Silergy

DataSheet26.com    |    2018    |   Контакты    |    Поиск