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PDF SGW15N120 Data sheet ( Hoja de datos )
| Número de pieza | SGW15N120 | |
| Descripción | Fast IGBT | |
| Fabricantes | Infineon | |
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SGP15N120 SGP15N120
SGW15N120
Fast IGBT in NPT-technology
• 40% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK) P-TO-247-3-1
(TO-263AB)
(TO-247AC)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGP15N120
SGB15N120
SGW15N120
VCE
1200V
IC
15A
Eoff
1.5mJ
Tj
150°C
Package
TO-220AB
TO-263AB(D2PAK)
TO-247AC
Ordering Code
Q67040-S4274
Q67040-S4275
Q67040-S4276
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 15A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
-
Value
1200
30
15
52
52
±20
85
10
198
-55...+150
260
Unit
V
A
V
mJ
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Jul-02
Free Datasheet http://www.datasheet4u.com/
1 page  
SGP15N120 SGP15N120
SGW15N120
50A 50A
40A
30A
VGE=17V
15V
13V
11V
20A 9V
7V
10A
40A
30A
20A
VGE=17V
15V
13V
11V
9V
7V
10A
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
50A
40A
30A
TJ=+150°C
20A TJ=+25°C
TJ=-40°C
10A
0A
3V 5V 7V 9V 11V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
6V
5V
IC=30A
4V
IC=15A
3V
IC=7.5A
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Jul-02
Free Datasheet http://www.datasheet4u.com/
5 Page 
SGP15N120 SGP15N120
SGW15N120
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
QQ
SF
10% I
t
rrm
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH,
and stray capacity Cσ =40pF.
Power Semiconductors
11
Jul-02
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SGW15N120.PDF ] | |
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