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PDF ESH1JM Data sheet ( Hoja de datos )
| Número de pieza | ESH1JM | |
| Descripción | Surface Mount Ultrafast Rectifiers | |
| Fabricantes | Taiwan Semiconductor | |
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CREAT BY ART
Surface Mount Ultrafast Rectifiers
FEATURES
- Very low profile - typical height of 0.68mm
- Reduce switching and conduction loss
- Ideal for automated placement
- Ultrafast recovery times for high frequency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ESH1JM
Taiwan Semiconductor
APPLICATION
ESH1JM is ideal device for the compact space PCB design.
Specially as boost diode in power factor correction circuitry.
The device is also intended for use as a free wheeling diode in power supplies
For chargers, LED lighting, and other power switching applications.
Micro SMA
MECHANICAL DATA
Case: Micro SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 0.006g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
ESH1JM
Marking code
D7
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
VRRM
IF(AV)
600
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
15
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=125 ℃
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
VF
TYP.
1.25
MAX.
1.5
TYP.
MAX.
IR -
1
5 50
Trr 25
Cj 3
Typical thermal resistance (Note 4)
RθJM
RθJA
40
92
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300 μsec, 1% duty cycle
TJ
TSTG
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0 V DC
Note 4: Thermal resistance RθJA - from junction to ambient, RθJM - and junction to mount
-55 to +150
-55 to +150
UNIT
V
A
A
V
μA
ns
pF
OC/W
OC
OC
Document Number：DS_D1311039
Version:A13
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ESH1JM.PDF ] | |
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