IRG4PC20UPBF PDF даташит
Спецификация IRG4PC20UPBF изготовлена «International Rectifier» и имеет функцию, называемую «UltraFast Speed IGBT». |
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Детали детали
Номер произв | IRG4PC20UPBF |
Описание | UltraFast Speed IGBT |
Производители | International Rectifier |
логотип |
8 Pages
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PD - 97289
IRG4PC20UPbF
PROVISIONAL
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
C
E
GC
TO-247AC
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
Collector-toEmitter Breakdown Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cPulsed Collector Current
dClamped Inductive Load Current
Gate-to-Emitter Voltage
eReverse Voltage Avalanche Energy
Power Dissipation
Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
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Max.
600
13
6.5
52
52
±20
5.0
60
24
-55 to + 150
300 (0.063 in.) (1.6mm from case)
x x10lb in (1.1N m)
Units
V
A
V
mJ
W
°C
N
Typ.
–––
0.24
–––
6.0 (0.21)
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
1
07/11/07
Free Datasheet http://www.datasheet4u.com/
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IRG4PC20UPbF
PROVISIONAL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage 600 ––– –––
fEmitter-to-Collector Breakdown Voltage
18 ––– –––
V VGE = 0V, ICE = 250µA
V VGE = 0V, ICE = 1.0A
∆V(BR)CES/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.69 ––– V/°C VGE = 0V, ICE = 1.0mA
––– 1.85 2.1
VGE = 15V, ICE = 6.5A
VCE(on)
Collector-to-Emitter Saturation Voltage
2.27 –––
V VGE = 15V, ICE = 13A
––– 1.87 –––
VGE = 15V, ICE = 6.5A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
V VCE = VGE, ICE = 250µA
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage Coefficient
gForward Transconductance
Collector-to-Emitter Leakage Current
IGES Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
––– -11 ––– mV/°C
1.4 4.3 ––– S VCE = 100V, ICE = 6.5A
––– ––– 250 µA VCE = 600V, VGE = 0V
––– ––– 2.0
VCE = 10V, VGE = 0V, TJ = 25°C
––– ––– 1000
VCE = 600V, VGE = 0V, TJ = 150°C
––– ––– 100 nA VGE = 20V
––– ––– -100
VGE = -20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge (turn-on)
––– 27 41
VCE = 400V
Qge Gate-to-Emitter Charge (turn-on)
Qgc Gate-to-Collector Charge
––– 4.5 6.8 nC IC = 6.5A
––– 10 16
eVGE = 15V
td(on)
Turn-On delay time
––– 21 –––
tr Rise time
––– 13 ––– ns IC = 6.5A, VCC = 480V
td(off)
Turn-Off delay time
––– 86 130
VGE = 15V, RG = 50Ω
tf Fall time
––– 120 180
TJ = 25°C
E(on)
Turn-On Switching Loss
––– 0.10 –––
Energy losses include "tail"
E(off)
Turn-Off Switching Loss
––– 0.12 ––– mJ
Ets Total Switching Loss
––– 0.22 0.4
td(on)
Turn-On delay time
––– 20 –––
IC = 6.5A, VCC = 480V
tr Rise time
––– 14 ––– ns VGE = 15V, RG = 50Ω
td(off)
Turn-Off delay time
––– 190 –––
TJ = 150°C
tf Fall time
––– 140 –––
Energy losses include "tail"
Ets Total Switching Loss
––– 0.42 ––– mJ
LE Internal Emitter Inductance
––– 7.5 ––– nH Measured 5mm from package
Cies Input Capacitance
––– 530 –––
VGE = 0V
Coes Output Capacitance
––– 39 ––– pF VCE = 30V
Cres Reverse Transfer Capacitance
––– 7.4 –––
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
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PROVISIONAL
IRG4PC20UPbF
25
20
15
Square wave:
60% of rated
voltage
10
I
5
Ideal diodes
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 13W
Triangular wave:
I
Clamp voltage:
80% of rated
0
0.1 1 10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
A
100
100
TJ = 25°C
TJ = 150°C
10
1
0.1
0.1
VGE = 15V
20µs PULSE WIDTH
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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A
100
TJ = 150°C
10
TJ = 25°C
1
V CC = 10V
0.1 5µs PULSE WIDTH A
4 6 8 10 12
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
Free Datasheet http://www.datasheet4u.com/
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Номер в каталоге | Описание | Производители |
IRG4PC20UPBF | UltraFast Speed IGBT | International Rectifier |
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