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даташит 2SK596S PDF ( Datasheet )

2SK596S Datasheet PDF Download - ON Semiconductor

Номер произв 2SK596S
Описание N-Channel JFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 
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2SK596S Даташит, Описание, Даташиты
Ordering number : ENA0944
2SK596S
N-Channel JFET
20V, 140 to 350μA, 1.0mS, SPA
http://onsemi.com
Features
Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1kΩ, Cin=15pF, VIN=0V, A curve)
Especiallysuited for use in condenser microphone for audio equipments and telephones
Excellent transient characteristic
Adoption of FBET process
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
Ratings
--20
10
1
100
150
--55 to +150
Unit
V
mA
mA
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7524-005
4.0 2.2 2SK596S-A
2SK596S-B
0.4
0.5
0.4 0.4
Product & Package Information
• Package
: SPA
• JEITA, JEDEC
: SC-72
• Minimum Packing Quantity : 500 pcs./bag
Marking
596S
LOT No.
Electrical Connection
3
2
123
1.3 1.3
3.0
3.8
1 : Source
2 : Gate
3 : Drain
SPA
1
Semiconductor Components Industries, LLC, 2013
August, 2013
51612GB TKIM TC-00002756 No. A0944-1/7
Free Datasheet http://www.datasheet4u.com/

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2SK596S Даташит, Описание, Даташиты
2SK596S
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
V(BR)GDO
VGS(off)
IG=--100μA
VDS=5V, ID=1μA
Drain Current
IDSS*
VDS=5V, VGS=0V
Forward Transfer Admittance
| yfs |
VDS=5V, VGS=0V, f=1kHz
Input Capacitance
Ciss
VDS=5V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0V, f=1MHz
[Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specied Test Circuit.]
Voltage Gain
GV VIN=10mV, f=1kHz
Reduced Voltage Characteristic
Frequency Characteristic
Total Harmonic Distortion
Output Noise Voltage
ΔGVV
ΔGvf
THD
VNO
VIN=10mV, f=1kHz, VCC=4.5V 1.5V
f=1kHz 110Hz
VIN=30mV, f=1kHz
VIN=0V, A curve
Rank
A
B
A
B
A
B
A
B
Ratings
min typ
--20
--0.4
100
150
0.4 0.8
4.1
0.88
--5.0
--3.8
--0.84
--0.90
2.0
1.6
max
--1.5
170
240
--1.8
--2.0
--1.0
--110
Unit
V
V
μA
mS
pF
pF
dB
dB
dB
%
dB
* : The 2SK596S is classied by IDSS as follows : (unit : μA)
Rank
A
B
IDSS
100 to 170
150 to 240
Test Circuit
Voltage Gain
Frequency Characteristic
Harmonic Distortion
Reduced Voltage Characteristic
1kΩ
15pF
+33μF
VCC=4.5V
VCC=1.5V
OSC
VTVM V THD
Ordering Information
Device
2SK596S-A
2SK596S-B
Package
SPA
SPA
Shipping
500pcs./bag
500pcs./bag
memo
Pb Free
No. A0944-2/7
Free Datasheet http://www.datasheet4u.com/

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2SK596S Даташит, Описание, Даташиты
2SK596S
200 ID -- VDS
180 VGS=0V
160
140
120
--0.1V
100
80
60
40
20 --0.4V
0
0 2468
Drain-to-SoIDurce--VoVltaGgeS, VDS -- V
300
VDS=5V
--0.2V
--0.3V
10
IT16804
250
200
150
100
50
Ta=75°2C5°C--25°C
0
--0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0
0.6 Gate-tVoG-SoSu(roceffV)ol-t-ageI,DVSGSS -- V
VDS=5V
0.55 ID=1μA
IT16806
0.5
0.45
0.4
0.35
0.3
0.25
0.2
80 100 120 140 160 180 200 220 240 260
5
Drain Current,
Crss --
IDVSDSS--
μA
IT16808
VGS=0V
3 f=1MHz
2
1.0
7
5
3
2
0.1
7
1.0
23
5 7 10
23
Drain-to-Source Voltage, VDS -- V ITR01789
300 ID -- VGS
VDS=5V
250
200
150
100
50
I DSS=240μ1A70μ1A00μA
0
--0.5 --0.4 --0.3 --0.2 --0.1
1.0 Gate-to-|Syoufsrce| V-o-ltaIgDe,SVSGS -- V
VDS=5V
0.95 VGS=0V
f=1kHz
0.9
0
IT16805
0.85
0.8
0.75
0.7
0.65
0.6
80 100 120 140 160 180 200 220 240 260
2
Drain Current,
Ciss --
IDVSDSS--
μA
IT16807
VGS=0V
f=1MHz
10
7
5
3
2
1.0
7
1.0
23
5 7 10
--2.0 Drain-to-SGouVrce--VoIltDagSe,SVDS -- V
--2.5
GV : VCC=4.5V
VIN=10mV
--3.0 Cin=15pF
RL=1kΩ
--3.5 f=1kHz
--4.0 IDSS : VDS=5.0V
23
ITR01788
--4.5
--5.0
--5.5
--6.0
--6.5
--7.0
80 100 120 140 160 180 200 220 240 260
Drain Current, IDSS -- μA
IT16809
No. A0944-3/7
Free Datasheet http://www.datasheet4u.com/






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