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2N5039 PDF даташит

Спецификация 2N5039 изготовлена ​​​​«Inchange Semiconductor» и имеет функцию, называемую «(2N5038 / 2N5039) Silicon NPN Power Transistors».

Детали детали

Номер произв 2N5039
Описание (2N5038 / 2N5039) Silicon NPN Power Transistors
Производители Inchange Semiconductor
логотип Inchange Semiconductor логотип 

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2N5039 Даташит, Описание, Даташиты
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5038 2N5039
DESCRIPTION
With TO-3 package
High speed
Low collector saturation voltage
APPLICATIONS
They are especially intended for high current
and fast switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5038
2N5039
VCEO
2N5038
Collector-emitter voltage
2N5039
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
150
120
90
75
7
20
30
5
140
200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
1.25
UNIT
/W
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2N5039 Даташит, Описание, Даташиты
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5038 2N5039
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5038
2N5039
IC=0.2A ;IB=0
VCEsat-1
Collector-emitter
saturation voltage
2N5038
2N5039
IC=12A ;IB=1.2A
IC=10A ;IB=1A
VCEsat-2 Collector-emitter saturation voltage IC=20A ;IB=5A
VBEsat Base-emitter saturation voltage
IC=20A ;IB=5A
2N5038 IC=12A ; VCE=5V
VBE Base-emitter on voltage
2N5039 IC=10A ; VCE=5V
2N5038 VCE=70V; IB=0
ICEO Collector cut-off current
2N5039 VCE=55V; IB=0
ICEX
Collector cut-off current
2N5038
2N5039
VCE=140V; VBE=-1.5V
VCE=100V; VBE=-1.5V ;TC=150
VCE=110V; VBE=-1.5V
VCE=85V; VBE=-1.5V TC=150
2N5038
IEBO Emitter cut-off current
VEB=5V; IC=0
2N5039
hFE-1
DC current gain
IC=2A ; VCE=5V
hFE-2
DC current gain
2N5038
2N5039
Is/b Second breakdown collector current
Switching times
IC=12A ; VCE=5V
IC=10A ; VCE=5V
VCE=28V,
VCE=45V(t=1.0s Nonrepetitive)
tr Rise time
ts Storage time
tf Fall time
For 2N5038
IC=12A ;IB1=- IB2=1.2A ;VCC=30V
For 2N5039
IC=10A ;IB1=- IB2=1A ;Vcc=30V
MIN TYP MAX UNIT
90
V
75
1.0 V
2.5 V
3.3 V
1.8 V
20 mA
5.0
10 mA
5.0
10
5
mA
15
50 250
20 100
5
0.9
A
0.5 s
1.5 s
0.5 s
2
Free Datasheet http://www.datasheet4u.com/









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2N5039 Даташит, Описание, Даташиты
Inchange Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2N5038 2N5039
Fig.2 outline dimensions (unindicated tolerance: 0.10mm)
3
Free Datasheet http://www.datasheet4u.com/










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