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Número de pieza | TSM12N65 | |
Descripción | 650V N-Channel Power MOSFET | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM12N65 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
TSM12N65
650V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
650 0.8 @ VGS =10V
ID (A)
6
General Description
The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
● Low RDS(ON) 0.68Ω (Typ.)
● Low gate charge typical @ 41nC (Typ.)
● Low Crss typical @ 14.6pF (Typ.)
● Fast Switching
Block Diagram
Ordering Information
Part No.
TSM12N65CI C0
Package
ITO-220
Packing
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc = 25ºC
Tc = 100ºC
VDS
VGS
ID
Pulsed Drain Current *
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 2
Single Pulse Avalanche Energy (Note 1)
Avalanche Current (Repetitive) (Note 1)
Total Power Dissipation @ TC = 25oC
IDM
EAS
IAS
EAR
IAR
PTOT
Operating Junction Temperature
Storage Temperature Range
Note: Limited by maximum junction temperature
TJ
TSTG
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RӨJC
RӨJA
Limit
650
±30
12
4.5
48
273
12
7.6
12
45
150
-55 to +150
Limit
2.7
62.5
Unit
V
V
A
A
A
mJ
A
mJ
A
W
ºC
oC
Unit
oC/W
oC/W
1/8
Version: A10
Free Datasheet http://www.datasheet4u.com/
1 page TSM12N65
650V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
5/8
Version: A10
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet TSM12N65.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM12N65 | 650V N-Channel Power MOSFET | Taiwan Semiconductor |
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