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PDF THM72V2010AG Data sheet ( Hoja de datos )
| Número de pieza | THM72V2010AG | |
| Descripción | DYNAMIC RAM MODULE | |
| Fabricantes | Toshiba | |
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TOSHIBA
THM72V2010AG/ATG-60/70
2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE
PRELIMINARY
Description
The THM72V2010AG/ATG is a 2,097,152 words by 72 bits dynamic RAM module which assembled 9 pcs of TC51V17800ANJ/ANT
on the printed circuit board. This module is optimized for application to the systems which are required high density and large capacity
such as main memory of the computers and as image memory systems, and to the others which are requested compact size.
Features
• 2,097,152 words by 72 bits organization
• Fast access time and cycle time
• Single power supply of 3.3V±5%
• Low Power
- 4,095mW MAX. Operating
- (THMxxxxxx-60)
- 3,470mW MAX. Operating
- (THMxxxxxx-70)
- 50.4mW MAX. Standby
• Read-Modify-Write, CAS before RAS refresh,
RAS-only refresh, Hidden refresh, and Fast
Page Mode capability
• All inputs and outputs TTL compatible
• 2,048 refresh cycles/32ms
• Package: 168pin Gold Contact
THM72V2010AG-x SOJ type
THM72V2010ATG-x TSOP type
Key Parameters
tRAC RAS Access
Time
tAA Column
Address
Access Time
tCAC CAS Access
Time
tRC Cycle Time
tPC Fast Page
Mode Cycle
Time
-60 -70
60ns 70ns
35ns 40ns
20ns 25ns
110ns 130ns
40ns 45ns
-60
PD0 “H”
PD1 “L”
PD2 “L”
PD3 “H”
PD4 “L”
PD5 “H”
PD6 “H”
PD7 “L”
ID0 VSS
ID1 VSS
-70
“H”
“L”
“L”
“H”
“L”
“L”
“H”
“L”
VSS
VSS
Note “H”: High Level (buffered)
“L”: Low Level (buffered)
1. This technical data may be controlled under U.S. Export Administration Regulations and may be subject to the approval of the U.S. Department of Commerce prior to export. Any export or re-export, directly or indi-
rectly, in contravention of the U.S. Export Administration Regulations is strictly prohibited.
2. LIFE SUPPORT POLICY
Toshiba products described in this document are not authorized for use as critical components in life support systems without the written consent of the appropriate officer of Toshiba America, Inc. Life support sys-
tems are either systems intended for surgical implant in the body or systems which sustain life.
A critical component in any component of a life support system whose failure to perform may cause a malfunction of the life support system, or may affect its safety or effectiveness.
3. The information in this document has been carefully checked and is believed to be reliable; however no responsibility can be assumed for inaccuracies that may not have been caught. All information in this data book
is subject to change without prior notice. Furthermore, Toshiba cannot assume responsibility for the use of any license under the patent rights of Toshiba or any third parties.
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
1
Free Datasheet http://www.datasheet4u.com/
1 page  
DM16050295
Standard DRAM
DC Electrical Characteristics (VCC = 3.3V±5%, Ta = 0 ~ 70°C)
SYMBOL
PARAMETER
|CC1
|CC2
|CC3
|CC4
|CC5
|CC6
|I (L)
|O (L)
VOH
VOL
OPERATING CURRENT
Average Power Supply Operating Current
(RAS, CS, Address Cycling: tRC=tRC MIN.)
STANDBY CURRENT
Power Supply Standby Current
(RAS=CAS=VIH)
RAS ONLY REFRESH CURRENT
Average Power Supply Current, RAS Only Mode
(RAS Cycling, CAS=VIH: tRC=tRC MIN.)
FAST PAGE MODE CURRENT
Average Power Supply Current, Fast Page Mode
(RAS=VIL, CAS, Address Cycling: tPC=tPC MIN.)
STANDBY CURRENT
Power Supply Standby Current
(RAS=CAS=VCC-0.2V)
CAS BEFORE RAS REFRESH CURRENT
Average Power Supply Current, CAS Before RAS Mode
(RAS, CAS Cycling: tRC=tRC MIN.)
INPUT LEAKAGE CURRENT
Input Leakage Current, any input
(0V≤VIN≤VCC, All Other Pins Not Under Test=0V)
OUTPUT LEAKAGE CURRENT
(DOUT is disabled, (0V≤VOUT≤VCC)
OUTPUT LEVEL
Output “H” Level Voltage (IOUT= -2mA)
OUTPUT LEVEL
Output “L” Level Voltage (IOUT=2mA)
THMxxxxxx-60
THMxxxxxx-70
THMxxxxxx-60
THMxxxxxx-70
THMxxxxxx-60
THMxxxxxx-70
THMxxxxxx-60
THMxxxxxx-70
THM72V2010AG/ATG-60/70
MIN MAX UNIT
- 1180
mA
- 1000
NOTE
3, 4
5
- 19 mA
- 1180
mA 3, 5
- 1000
-
-
685
mA
595
3, 4
5
- 14.5 mA
- 1180
mA 3, 5
- 1000
-10 10
µA
-10 10
2.4 -
- 0.4
µA
V
V
Capacitance (VCC = 3.3V±5%, f = 1MHz, Ta = 0 ~ 70°C)
SYMBOL
PARAMETER
CI1 Input Capacitance (B0, A0 ~ A9, A10R)
CI2 Input Capacitance (WE0, 2)
CI3 Input Capacitance (RAS0, 2)
CI4 Input Capacitance (CAS0, 4)
CI5 Input Capacitance (OE0, 2)
CI6 Input Capacitance (PDE)
CDQ I/O Capacitance (DQ0 ~ 71)
MIN MAX UNIT
- 13
- 10
- 33
- 10 PF
- 10
- 13
- 30
PRELIMINARY
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
DM16050295
Write Cycle (Early Write)
Standard DRAM
THM72V2010AG/ATG-60/70
PRELIMINARY
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet THM72V2010AG.PDF ] | |
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