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PDF HMC1105 Data sheet ( Hoja de datos )
| Número de pieza | HMC1105 | |
| Descripción | GaAs MMIC x2 PASSIVE FREQUENCY MULTIPLIER | |
| Fabricantes | Hittite | |
| Logotipo |  |
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v00.1013
Typical Applications
The HMC1105 is ideal for:
• Microwave Test Equipment
• Microwave/mmWave Radios
• E-Band Radios
• Military and Space
HMC1105
GaAs MMIC x2 PASSIVE FREQUENCY
MULTIPLIER, 20 - 40 GHz INPUT
Features
Passive: No DC Bias Required
Conversion Loss: 12 dBm
Fo Isolation: 41 dB
3Fo Isolation: 46 dB
Die Size: 1.79 x 1.19 x 0.1 mm
Functional Diagram
General Description
The HMC1105 is a passive miniature frequency
doubler in a MMIC die. Suppression of undesired
fundamental and higher order harmonics is up to
41 dB typical with respect to input signal level. The
doubler utilizes the same GaAs Schottky diode/
balun technology found in Hittite MMIC mixers. The
HMC1105 features small size, requires no DC bias,
and adds no measurable additive phase noise onto
the multiplied signal. The HMC1105 is compatible with
conventional die attach methods which make it ideal
for MCM and hybrid microcircuit applications. All data
shown herein is measured with the chip in a 50 ohm
environment and contacted with RF probes.
Electrical Specifications, TA = +25°C, Input Drive Level = +15 dBm
Parameter
Frequency Range Input
Frequency Range Output
Conversion Loss
Input Return Loss
Output Return Loss
FO Isolation
3Fo Isolation
Min. Typ. Max
20 - 30
40 - 60
11 15
7
13
41
42
Min. Typ.
30 - 40
60 - 80
12
6
7
41
46
Max.
16
Units
GHz
GHz
dB
dB
dB
dB
dB
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Free Datasheet http://www.datasheet4u.com/
1 page  
v00.1013
HMC1105
GaAs MMIC x2 PASSIVE FREQUENCY
MULTIPLIER, 20 - 40 GHz INPUT
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). One way to accomplish this is to attach the 0.102mm (4 mil)
thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-
tab) which is then attached to the ground plane (Figure 2). Microstrip
substrates should be located as close to the die as possible in order to
minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to
0.152 mm (3 to 6 mils).
0.076mm
(0.003”)
Wire Bond
RF Ground Plane
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
0.076mm
(0.003”)
Wire Bond
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have
fragile air bridges and should not be touched with vacuum collet, tweezers,
or fingers.
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
5
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC1105.PDF ] | |
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