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даташит 04N80C3 PDF ( Datasheet )

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Номер произв 04N80C3
Описание SPA04N80C3
Производители Infineon
логотип Infineon логотип 



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04N80C3 Даташит, Описание, Даташиты
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute)
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Product Summary
V DS
R DS(on)max @ Tj = 25°C
Q g,typ
SPA04N80C3
800 V
1.3
23 nC
Type
SPA04N80C3
Package
PG-TO220-3
Marking
04N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current2)
ID
Pulsed drain current3)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
3),4)
AR
Avalanche
current,
repetitive
t
3),4)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=0.8A, V DD=50 V
I D=4 A, V DD=50 V
V DS=0…640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Mounting torque
M2.5 screws
Rev. 2.9
page 1
Value
4
2.5
12
170
0.1
4
50
±20
±30
38
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2008-10-15
Free Datasheet http://www.datasheet4u.com/









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04N80C3 Даташит, Описание, Даташиты
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current3)
Reverse diode dv /dt 5)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
SPA04N80C3
Value
4
12
4
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature,
wave soldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10s
min.
Values
typ.
Unit
max.
- - 4 K/W
- - 80
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
800
-
-V
Avalanche breakdown voltage
V (BR)DS V GS=0 V, I D=4 A
- 870 -
Gate threshold voltage
V GS(th) V DS=V GS, I D=0.24 mA 2.1 3 3.9
Zero gate voltage drain current
I DSS
V DS=800 V, V GS=0 V,
T j=25 °C
-
- 10 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=800 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=2.5 A,
T j=25 °C
-
-
-
50 -
- 100 nA
1.1 1.3
Gate resistance
V GS=10 V, I D=2.5 A,
T j=150 °C
-
3
-
R G f =1 MHz, open drain - 1.2 -
Rev. 2.9
page 2
2008-10-15
Free Datasheet http://www.datasheet4u.com/









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04N80C3 Даташит, Описание, Даташиты
Parameter
Dynamic characteristics
Symbol Conditions
SPA04N80C3
min.
Values
typ.
Unit
max.
Input capacitance
Output capacitance
C iss V GS=0 V, V DS=100 V, - 570 - pF
C oss
f =1 MHz
- 25 -
Effective output capacitance, energy
related6)
C o(er)
Effective output capacitance, time
related7)
C o(tr)
V GS=0 V, V DS=0 V
to 480 V
- 19 -
- 51 -
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
- 25 - ns
t r V DD=400 V,
- 15 -
V GS=0/10 V, I D=4 A,
t d(off)
R G=22 ? , T j=25 °C
-
72
-
t f - 12 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd V DD=640 V, I D=4 A,
Q g V GS=0 to 10 V
V plateau
-
-
-
-
3 - nC
12 -
23 31
5.5 - V
Reverse Diode
Diode forward voltage
V SD
V GS=0 V, I F=I S=4 A,
T j=25 °C
-
1 1.2 V
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
t rr - 520 - ns
Q rr
V R=400 V, I F=I S=4 A,
di F/dt =100 A/µs
-
4
- µC
I rrm - 12 - A
1) J-STD20 and JESD22
2) Limited only by maximum temperature
3) Pulse width t p limited by T j,max
4) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
5) ISD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.9
page 3
2008-10-15
Free Datasheet http://www.datasheet4u.com/










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