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Datasheet 55NF06 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 55NF06 | N-CHANNEL POWER MOSFET TRANSISTOR 55NF06
®
Pb Free Plating Product
55NF06
Pb
N-CHANNEL POWER MOSFET TRANSISTOR
50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET
DESCRIPTION
12 3 TO-251/IPAK
ThinkiSemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistan |  THINKISEMI | mosfet |
| 2 | 55NF06 | STP55NF06 STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP
N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I²PAK/D²PAK
STripFET™ II POWER MOSFET
TYPE STP55NF06 STB55NF06-1 STB55NF06 STP55NF06FP
s s s s
VDSS 60 V 60 V 60 V 60 V
RDS(on) <0.018 <0.018 <0.018 <0.018 Ω Ω Ω Ω
ID 50 A |  ST Microelectronics | data |
| 3 | 55NF06 | N-CHANNEL POWER MOSFET TRANSISTOR 55NF06
®
Pb Free Plating Product
55NF06
Pb
N-CHANNEL POWER MOSFET TRANSISTOR
50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET
DESCRIPTION
12 3 TO-251/IPAK
Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistan |  Thinki Semiconductor | mosfet |
55N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 55N | MCF For MCA / Personal Radio MCF FOR MCA • PERSONAL RADIO
s Features
8 Compactness and light weight 8 Narrow bandwidth
Model 55N9BD 55N12B 55N17B 58N9BE 58N12A 58N17BH
Nominal Frequency (MHz) 55.025 55.025 55.025 58.1125 58.1125 58.1125
Pole 4 4 4 4 2 4
Pass Bandwidth (dB) 3 3 3 3 3 3 (kHz) ±4.5 ±6 ±8.5 ±4.5 ±6 ±8.  Nihon data | | |
| 2 | 55N | Direct Drive Displays LXD data | | |
| 3 | 55N03LT | PHB55N03LT
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor Logic level FET
FEATURES
• ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible
PHP55N03LT, PHB55N03LT PHD55N03LT
QUIC  NXP Semiconductors data | | |
| 4 | 55N03LTA | Logic Level FET PHP/PHB/PHD55N03LTA
TrenchMOS™ Logic Level FET
Rev. 04 — 4 September 2002 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK)  Philips data | | |
| 5 | 55N06L | STP55N06L This Material Copyrighted By Its Respective Manufacturer
Free Datasheet http://www.datasheet-pdf.com/
This Material Copyrighted By Its Respective Manufacturer
Free Datasheet http://www.datasheet-pdf.com/
This Material Copyrighted By Its Respective Manufacturer
Free Datasheet http://www.datasheet-p  STMicroelectronics data | | |
| 6 | 55N10 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
55N10
DESCRIPTION ·Drain Current ID= 55A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Fast Switching Speed
APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMET  Inchange Semiconductor mosfet | | |
| 7 | 55N10 | FQA55N10 FQA55N10
August 2000
QFET
FQA55N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resi  Fairchild Semiconductor data | |
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