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Datasheet F20C20 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | F20C20 | Dual Fast Recovery Power Rectifiers MOSPEC
Switchmode Dual Fast Recovery Power Rectifiers
Designed for use in switching power supplies. inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ ¡¯ Glass Passivated chip junctions Low Reverse Leakage Current Fast S |  Mospec | rectifier |
| 2 | F20C20A | Switchmode Dual Fast Recovery Power Rectifiers F20C05 thru F20C20
®
Pb Free Plating Product
F20C05 thru F20C20
Switchmode Dual Fast Recovery Power Rectifiers
Pb
Designed for use in switching power supplies. inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ¡¯ ¡¯ Glass Passivated chip jun |  Thinki Semiconductor | rectifier |
| 3 | F20C20C | Switchmode Dual Fast Recovery Power Rectifiers F20C05 thru F20C20
®
Pb Free Plating Product
F20C05 thru F20C20
Switchmode Dual Fast Recovery Power Rectifiers
Pb
Designed for use in switching power supplies. inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ¡¯ ¡¯ Glass Passivated chip jun | Thinki Semiconductor | rectifier |
| 4 | F20C20D | Switchmode Dual Fast Recovery Power Rectifiers F20C05 thru F20C20
®
Pb Free Plating Product
F20C05 thru F20C20
Switchmode Dual Fast Recovery Power Rectifiers
Pb
Designed for use in switching power supplies. inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ¡¯ ¡¯ Glass Passivated chip jun | Thinki Semiconductor | rectifier |
F20 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | F20 | Diode Switching 2KV 0.35A 2-Pin Case G-66 New Jersey Semiconductor diode | | |
| 2 | F2001 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly  Polyfet RF Devices transistor | | |
| 3 | F2002 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | | |
| 4 | F2003 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | | |
| 5 | F2004 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | | |
| 6 | F2012 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | | |
| 7 | F2013 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | |
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