DataSheet26.com

BR25005 PDF даташит

Спецификация BR25005 изготовлена ​​​​«Galaxy Semi-Conductor» и имеет функцию, называемую «(BR25005 - BR2510) SILICON BRIDGE RECTIFIERS».

Детали детали

Номер произв BR25005
Описание (BR25005 - BR2510) SILICON BRIDGE RECTIFIERS
Производители Galaxy Semi-Conductor
логотип Galaxy Semi-Conductor логотип 

2 Pages
scroll

No Preview Available !

BR25005 Даташит, Описание, Даташиты
BL GALAXY ELECTRICAL
BR25005(W)---BR2510(W)
SILICON BRIDGE RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 25.0 A
FEATURES
Rating to 1000V PRV
Surge overload rating to 300 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Mounting: thru hole for # 8 screw mounting
BR - W
METAL HEAT SINK
PLASTIC
.042(1.1)
.090(2.0)
1.181(30.0)
1.102(28.0)
.452 MAX
(11.5)
.480(12.2)
.425(10.8)
HOLE FOR
NO.8 SCREW
.732(18.6)
.692(17.6)
AC +
- AC
.732(18.6)
.692(17.6)
1.181(30.0)
1.102(28.0)
.468(11.9)
.429(10.9)
.033x 250
(0.8x 6.4)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
output current @TA=50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 12.5 A
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
Operating junction temperature range
Storage temperature range
BR
25005
(W)
VRRM
VRMS
VDC
50
35
50
BR
2501
(W)
100
70
100
BR
2502
(W)
200
140
200
BR
2504
(W)
400
280
400
BR
2506
(W)
600
420
600
BR
2508
(W)
800
560
800
BR
2510
(W)
1000
700
1000
UNITS
V
V
V
IF(AV)
25.0
A
IFSM
300.0
A
VF
IR
TJ
TSTG
1.1
5.0
0.5
- 55 ---- + 150
- 55 ---- + 150
V
μA
mA
www.galaxycn.com
Document Number 0287050
BLGALAXY ELECTRICAL
1.









No Preview Available !

BR25005 Даташит, Описание, Даташиты
RATINGSANDCHARACTERISTIC CURVES
BR25005(W) - - - BR2510(W)
FIG.1 -- PEAK FORWARD SURGE CURRENT
500
400
300
200
100
0
1
8.3ms Single Half Sine Wave
TJ=125
10 100
NUMBER OF CYCLES AT 60HZ
FIG.2 -- FORWARD DERATING CURVE
25
20
15
10
5
00 50 100 150 175
AMBIENT TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
100
10
1.0
TJ=25
0.1
.01.6
.7 .8
.9 1
1.1 1.2 1.3
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
10
1.0
0.1
TJ=25
.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE
Document Number 0287050
BLGALAXY ELECTRICAL
www.galaxycn.com
2.
Free Datasheet http://www.datasheet4u.com/










Скачать PDF:

[ BR25005.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
BR2500Bridge RectifierFormosa MS
Formosa MS
BR2500SILICON BRIDGE RECTIFIERSEIC discrete Semiconductors
EIC discrete Semiconductors
BR2500Diode ( Rectifier )American Microsemiconductor
American Microsemiconductor
BR25005(BR25005 - BR2510) SILICON BRIDGE RECTIFIERSGalaxy Semi-Conductor
Galaxy Semi-Conductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск