DataSheet26.com

4A10 PDF даташит

Спецификация 4A10 изготовлена ​​​​«Galaxy Semi-Conductor» и имеет функцию, называемую «PLASTIC SILICON RECTIFIER».

Детали детали

Номер произв 4A10
Описание PLASTIC SILICON RECTIFIER
Производители Galaxy Semi-Conductor
логотип Galaxy Semi-Conductor логотип 

2 Pages
scroll

No Preview Available !

4A10 Даташит, Описание, Даташиты
BL GALAXY ELECTRICAL
PLASTIC SILICON RECTIFIER
4A1---4A10
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 4.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Isopropanol
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
4A1
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
9.5mm lead length, @TA=75
Peak forward surge current
VRRM
VRMS
VDC
IF(AV)
10ms single half-sine-wave
superimposed on rated load @TJ=125
Maximum instantaneous forward voltage
@ 4.0A
IFSM
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Typical junction capacitance (Note1)
CJ
Typical thermal resistance
(Note2)
R JA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient.
100
70
100
4A2
200
140
200
4A4 4A6
400 600
280 420
400 600
4.0
4A8 4A10
800 1000
560 700
800 1000
UNITS
V
V
V
A
250.0
A
0.95
10.0
100.0
50
20
- 55 ---- +150
- 55 ---- +150
V
A
pF
/W
www.galaxycn.com
Document Number 0260010
BLGALAXY ELECTRICAL
1.
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

4A10 Даташит, Описание, Даташиты
RATINGS AND CHARACTERISTIC CURVES
4A1---4A10
FIG.1 -- FORWARD DERATING CURVE
5
4
3
Single Phase
Half Wave60Hz
2
Resistive or
Inductive Load
1
0
0 25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE,
FIG.2 -- TYPICAL FORWARD CHARACTERISTICS
10
1.0
TJ=125
Pulse Width
=300µs
0.1
.01
0.3
0.5
0.7 0.9 1.1
1.3 1.5
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 --MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
600
500
400
TJ=25
Pulse Width=8.3ms
300
200
100
0
1 10 100
NUMBER OF CYCLES AT 60Hz
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
150
100
50
f=1MHz
TJ=25
0
1 4 10
100
REVERSE VOLTAGE, VOLTS
Document Number 0260010
BLGALAXY ELECTRICAL
www.galaxycn.com
2.
Free Datasheet http://www.datasheet4u.com/










Скачать PDF:

[ 4A10.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
4A1PLASTIC SILICON RECTIFIERGalaxy Semi-Conductor
Galaxy Semi-Conductor
4A1Plastic Silicon RectifiersLuguang Electronic
Luguang Electronic
4A10PLASTIC SILICON RECTIFIERGalaxy Semi-Conductor
Galaxy Semi-Conductor
4A10Plastic Silicon RectifiersLuguang Electronic
Luguang Electronic

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск