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PMXB350UPE PDF даташит
| Спецификация PMXB350UPE изготовлена «NXP Semiconductors» и имеет функцию, называемую «P-channel Trench MOSFET». |
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Детали детали
| Номер произв | PMXB350UPE |
| Описание | P-channel Trench MOSFET |
| Производители | NXP Semiconductors |
| логотип |  |
15 Pages
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PMXB350UPE
20 V, P-channel Trench MOSFET
19 September 2013
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Exposed drain pad for excellent thermal conduction
• ElectroStatic Discharge (ESD) protection 1 kV HBM
• Drain-source on-state resistance RDSon = 100 mΩ
3. Applications
• High-side load switch and charging switch for portable devices
• Power management in battery driven portables
• LED driver
• DC-to-DC converter
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-8 -
8V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C
[1] - - -1.2 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -1.2 A; Tj = 25 °C
resistance
- 350 447 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMXB350UPE
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
4 D drain
Simplified outline
1
Graphic symbol
D
43
G
2
Transparent top view
DFN1010D-3 (SOT1215)
S
017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMXB350UPE
DFN1010D-3
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm
Version
SOT1215
7. Marking
Table 4. Marking codes
Type number
PMXB350UPE
MARKING CODE
(EXAMPLE)
PIN 1
INDICATION MARK
Marking code
11 10 00
READING
DIRECTION
YEAR DATE
CODE
VENDOR CODE
MARK-FREE AREA
READING EXAMPLE:
11
01
10
Fig. 1. DFN1010D-3 (SOT1215) binary marking code description
aaa-008041
PMXB350UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2013
© NXP N.V. 2013. All rights reserved
2 / 15
Free Datasheet http://www.datasheet4u.com/
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NXP Semiconductors
PMXB350UPE
20 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tsp = 25 °C
Tamb = 25 °C
[1]
[1]
[2]
[1]
[1]
Min Max Unit
- -20 V
-8 8
V
- -1.2 A
- -1 A
- -5 A
- 360 mW
- 930 mW
- 5680 mW
-55 150 °C
-55 150 °C
-65 150 °C
- -0.9 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
120
017aaa123
120
017aaa124
Pder
(%)
Ider
(%)
80 80
40 40
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 2. Normalized total power dissipation as a
function of junction temperature
0
- 75 - 25
25
75 125 175
Tj (°C)
Fig. 3. Normalized continuous drain current as a
function of junction temperature
PMXB350UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2013
© NXP N.V. 2013. All rights reserved
3 / 15
Free Datasheet http://www.datasheet4u.com/
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| Номер в каталоге | Описание | Производители |
| PMXB350UPE | P-channel Trench MOSFET | NXP Semiconductors |
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