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PMXB120EPE PDF даташит

Спецификация PMXB120EPE изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «P-channel Trench MOSFET».

Детали детали

Номер произв PMXB120EPE
Описание P-channel Trench MOSFET
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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PMXB120EPE Даташит, Описание, Даташиты
PMXB120EPE
30 V, P-channel Trench MOSFET
24 September 2013
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV HBM
Drain-source on-state resistance RDSon = 100 mΩ
3. Applications
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -10 V; Tamb = 25 °C
VGS = -10 V; ID = -2.4 A; Tj = 25 °C
Min Typ Max Unit
- - -30 V
-20 -
20 V
[1] - - -2.4 A
- 100 120 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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PMXB120EPE Даташит, Описание, Даташиты
NXP Semiconductors
PMXB120EPE
30 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
4 D drain
Simplified outline
1
Graphic symbol
D
43
G
2
Transparent top view
DFN1010D-3 (SOT1215)
S
017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMXB120EPE
DFN1010D-3
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm
Version
SOT1215
7. Marking
Table 4. Marking codes
Type number
PMXB120EPE
MARKING CODE
(EXAMPLE)
PIN 1
INDICATION MARK
Marking code
10 01 00
READING
DIRECTION
YEAR DATE
CODE
VENDOR CODE
MARK-FREE AREA
READING EXAMPLE:
11
01
10
Fig. 1. DFN1010D-3 (SOT1215) binary marking code description
aaa-008041
PMXB120EPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 September 2013
© NXP N.V. 2013. All rights reserved
2 / 15
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PMXB120EPE Даташит, Описание, Даташиты
NXP Semiconductors
PMXB120EPE
30 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -10 V; Tamb = 25 °C
VGS = -10 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tsp = 25 °C
Tamb = 25 °C
[1]
[1]
[2]
[1]
[1]
Min Max Unit
- -30 V
-20 20
V
- -2.4 A
- -1.5 A
- -10 A
- 0.4 W
- 1.07 W
- 8.33 W
-55 150 °C
-55 150 °C
-65 150 °C
- -0.9 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
120
017aaa123
120
017aaa124
Pder
(%)
Ider
(%)
80 80
40 40
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 2. Normalized total power dissipation as a
function of junction temperature
0
- 75 - 25
25
75 125 175
Tj (°C)
Fig. 3. Normalized continuous drain current as a
function of junction temperature
PMXB120EPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 September 2013
© NXP N.V. 2013. All rights reserved
3 / 15
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