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PBSS4260QA PDF даташит

Спецификация PBSS4260QA изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «NPN low VCEsat (BISS) transistor».

Детали детали

Номер произв PBSS4260QA
Описание NPN low VCEsat (BISS) transistor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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PBSS4260QA Даташит, Описание, Даташиты
PBSS4260QA
60 V, 2 A NPN low VCEsat (BISS) transistor
28 August 2013
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
PNP complement: PBSS5260QA.
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
High energy efficiency due to less heat generation
Reduced Printed-Circuit Board (PCB) area requirements
Solderable side pads
AEC-Q101 qualified
3. Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
collector-emitter
saturation resistance
IC = 1 A; IB = 0.1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - 60 V
- - 2A
- - 3A
- 130 180 mΩ
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PBSS4260QA Даташит, Описание, Даташиты
NXP Semiconductors
PBSS4260QA
60 V, 2 A NPN low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 B base
2 E emitter
3 C collector
4 C collector
Simplified outline
1
43
2
Graphic symbol
C
B
E
sym123
Transparent top view
DFN1010D-3 (SOT1215)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS4260QA
DFN1010D-3
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 3 terminals
Version
SOT1215
7. Marking
Table 4. Marking codes
Type number
PBSS4260QA
MARKING CODE
(EXAMPLE)
PIN 1
INDICATION MARK
Marking code
11 11 00
READING
DIRECTION
YEAR DATE
CODE
VENDOR CODE
MARK-FREE AREA
READING EXAMPLE:
11
01
10
Fig. 1. DFN1010D-3 (SOT1215) binary marking code description
aaa-008041
PBSS4260QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 August 2013
© NXP N.V. 2013. All rights reserved
2 / 17
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PBSS4260QA Даташит, Описание, Даташиты
NXP Semiconductors
PBSS4260QA
60 V, 2 A NPN low VCEsat (BISS) transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IB base current
IBM peak base current
single pulse; tp ≤ 1 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
Min Max Unit
- 60 V
- 60 V
- 7V
- 2A
- 3A
- 0.3 A
- 1A
[1] -
325 mW
[2] -
600 mW
[3] -
740 mW
[4] -
540 mW
[5] -
1000 mW
- 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 PCB single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm2.
PBSS4260QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 August 2013
© NXP N.V. 2013. All rights reserved
3 / 17
Free Datasheet http://www.datasheet4u.com/










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