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PBSS5130QA PDF даташит
| Спецификация PBSS5130QA изготовлена «NXP Semiconductors» и имеет функцию, называемую «PNP low VCEsat (BISS) transistor». |
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Детали детали
| Номер произв | PBSS5130QA |
| Описание | PNP low VCEsat (BISS) transistor |
| Производители | NXP Semiconductors |
| логотип |  |
17 Pages
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PBSS5130QA
30 V, 1 A PNP low VCEsat (BISS) transistor
28 August 2013
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
NPN complement: PBSS4130QA.
2. Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• High energy efficiency due to less heat generation
• Reduced Printed-Circuit Board (PCB) area requirements
• Solderable side pads
• AEC-Q101 qualified
3. Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current tp ≤ 1 ms; pulsed
collector-emitter
saturation resistance
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -30 V
- - -1 A
- - -1.5 A
- 160 240 mΩ
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NXP Semiconductors
PBSS5130QA
30 V, 1 A PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 B base
2 E emitter
3 C collector
4 C collector
Simplified outline
1
43
2
Graphic symbol
C
B
E
sym132
Transparent top view
DFN1010D-3 (SOT1215)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS5130QA
DFN1010D-3
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 3 terminals
Version
SOT1215
7. Marking
Table 4. Marking codes
Type number
PBSS5130QA
MARKING CODE
(EXAMPLE)
PIN 1
INDICATION MARK
Marking code
00 10 10
READING
DIRECTION
YEAR DATE
CODE
VENDOR CODE
MARK-FREE AREA
READING EXAMPLE:
11
01
10
Fig. 1. DFN1010D-3 (SOT1215) binary marking code description
aaa-008041
PBSS5130QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 August 2013
© NXP N.V. 2013. All rights reserved
2 / 17
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No Preview Available ! |
NXP Semiconductors
PBSS5130QA
30 V, 1 A PNP low VCEsat (BISS) transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
tp ≤ 1 ms; pulsed
IB base current
IBM peak base current
tp ≤ 1 ms; pulsed
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
Min Max Unit
- -30 V
- -30 V
- -7 V
- -1 A
- -1.5 A
- -0.3 A
- -1 A
[1] -
325 mW
[2] -
600 mW
[3] -
740 mW
[4] -
540 mW
[5] -
1000 mW
- 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm2.
PBSS5130QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 August 2013
© NXP N.V. 2013. All rights reserved
3 / 17
Free Datasheet http://www.datasheet4u.com/
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| Номер в каталоге | Описание | Производители |
| PBSS5130QA | PNP low VCEsat (BISS) transistor | NXP Semiconductors |
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