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PBSS5160V PDF даташит
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Детали детали
| Номер произв | PBSS5160V |
| Описание | PNP low VCEsat (BISS) transistor |
| Производители | NXP Semiconductors |
| логотип |  |
14 Pages
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PBSS5160V
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic
package.
NPN complement: PBSS4160V.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency leading to less heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
Major application segments
Automotive
Telecom infrastructure
Industrial
Power management
DC-to-DC conversion
Supply line switching
Peripheral driver
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
open base
IC = −1 A;
IB = −100 mA
-
[1] -
-
-
- −60
- −1
- −2
220 330
[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
V
A
A
mΩ
Free Datasheet http://www.datasheet4u.com/
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NXP Semiconductors
PBSS5160V
60 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1, 2, 5, 6
3
4
Pinning
Description
collector
base
emitter
Simplified outline Symbol
654
123
1, 2, 5, 6
3
4
sym030
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
PBSS5160V -
plastic surface mounted package; 6 leads
Version
SOT666
4. Marking
Table 4. Marking codes
Type number
PBSS5160V
Marking code
51
5. Limiting values
PBSS5160V_3
Product data sheet
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
collector-base voltage open emitter
collector-emitter
voltage
open base
-
-
VEBO
IC
emitter-base voltage open collector
collector current (DC)
-
[1] -
[2] -
ICM peak collector current t = 1 ms or limited
by Tj(max)
IB base current (DC)
IBM
peak base current
tp ≤ 300 μs; δ ≤ 0.02
Ptot total power dissipation Tamb ≤ 25 °C
-
-
-
[1] -
[2] -
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
−65
−65
Rev. 03 — 14 December 2009
Max Unit
−80 V
−60 V
−5 V
−0.9 A
−1 A
−2 A
−300
−1
300
500
150
+150
+150
mA
A
mW
mW
°C
°C
°C
© NXP B.V. 2009. All rights reserved.
2 of 14
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
NXP Semiconductors
PBSS5160V
60 V, 1 A PNP low VCEsat (BISS) transistor
[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on a FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
0.6
Ptot
(W)
0.4
0.2
(1)
(2)
001aaa714
0
0 40 80
(1) FR4 PCB; 1 cm2 collector mounting pad
(2) FR4 PCB; standard footprint
Fig 1. Power derating curves
120 160
Tamb (°C)
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from in free air
junction to ambient
Min Typ Max Unit
[1] - - 415 K/W
[2] - - 250 K/W
[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on a FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
PBSS5160V_3
Product data sheet
Rev. 03 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
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