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PBSS5230PAP PDF даташит
| Спецификация PBSS5230PAP изготовлена «NXP Semiconductors» и имеет функцию, называемую «PNP/PNP low VCEsat (BISS) transistor». |
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Детали детали
| Номер произв | PBSS5230PAP |
| Описание | PNP/PNP low VCEsat (BISS) transistor |
| Производители | NXP Semiconductors |
| логотип |  |
17 Pages
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PBSS5230PAP
30 V, 2 A PNP/PNP low VCEsat (BISS) transistor
11 January 2013
Product data sheet
1. General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4230PANP. NPN/NPN complement: PBSS4230PAN.
2. Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = -1 A; IB = -0.1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -30 V
- - -2 A
- - -3 A
- - 195 mΩ
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NXP Semiconductors
PBSS5230PAP
30 V, 2 A PNP/PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E1 emitter TR1
2 B1 base TR1
3 C2 collector TR2
4 E2 emitter TR2
5 B2 base TR2
6 C1 collector TR1
7 C1 collector TR1
8 C2 collector TR2
Simplified outline
654
Graphic symbol
C1 B2 E2
78
TR2
TR1
123
Transparent top view
DFN2020-6 (SOT1118)
E1 B1 C2
sym138
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBSS5230PAP
DFN2020-6
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals; body 2 x 2 x 0.65 mm
Version
SOT1118
7. Marking
Table 4. Marking codes
Type number
PBSS5230PAP
Marking code
2H
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IB base current
PBSS5230PAP
All information provided in this document is subject to legal disclaimers.
Product data sheet
11 January 2013
Min Max Unit
- -30 V
- -30 V
- -7 V
- -2 A
- -3 A
- -0.3 A
© NXP B.V. 2013. All rights reserved
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NXP Semiconductors
PBSS5230PAP
30 V, 2 A PNP/PNP low VCEsat (BISS) transistor
Symbol
IBM
Ptot
Per device
Ptot
Tj
Tamb
Tstg
Parameter
peak base current
total power dissipation
Conditions
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
Min Max Unit
- -1 A
[1] -
370 mW
[2] -
570 mW
[3] -
530 mW
[4] -
700 mW
[5] -
450 mW
[6] -
760 mW
[7] -
700 mW
[8] -
1450 mW
total power dissipation
Tamb ≤ 25 °C
junction temperature
ambient temperature
storage temperature
[1] -
510 mW
[2] -
780 mW
[3] -
730 mW
[4] -
960 mW
[5] -
620 mW
[6] -
1040 mW
[7] -
960 mW
[8] -
2000 mW
- 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.
[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.
[4] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.
[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.
[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.
[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.
[8] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.
PBSS5230PAP
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 January 2013
© NXP B.V. 2013. All rights reserved
3 / 17
Free Datasheet http://www.datasheet4u.com/
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| Номер в каталоге | Описание | Производители |
| PBSS5230PAP | PNP/PNP low VCEsat (BISS) transistor | NXP Semiconductors |
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