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GT20J341 PDF даташит
| Спецификация GT20J341 изготовлена «Toshiba» и имеет функцию, называемую «Discrete IGBTs Silicon N-Channel IGBT». |
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Детали детали
| Номер произв | GT20J341 |
| Описание | Discrete IGBTs Silicon N-Channel IGBT |
| Производители | Toshiba |
| логотип |  |
10 Pages
No Preview Available ! |
Discrete IGBTs Silicon N-Channel IGBT
GT20J341
1. Applications
• Motor Drivers
2. Features
(1) Sixth generation
(2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 20 A)
(3) FRD included between emitter and collector
3. Packaging and Internal Circuit
GT20J341
TO-220SIS
1: Gate
2: Collector
3: Emitter
1 2012-04-26
Rev.2.0
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
GT20J341
4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES 600 V
Gate-emitter voltage
VGES
±25
Collector current (DC)
(Tc = 25)
IC 20 A
Collector current (DC)
(Tc = 100)
IC 11
Collector current (pulsed)
ICP 80
Diode forward current (DC)
(Tc = 25)
IF 20
Diode forward current (DC)
(Tc = 100)
IF 9
Short circuit withstand time
(Note 1)
tsc
5 µs
Collector power dissipation
(Tc = 25)
PC 45 W
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
temperature.
In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads
to thermorunaway and results in destruction.
Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT.
Note 1: VCC = 300 V, VGG = +15 V/0 V, Tj ≤ 125
5. Thermal Characteristics
Characteristics
Junction-to-case thermal resistance (IGBT)
Junction-to-case thermal resistance (diode)
Symbol
Rth(j-c)
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25, unless otherwise specified)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Diode forward voltage
Diode forward voltage
Symbol
Test Condition
IGES
ICES
VGE(OFF)
VCE(sat)
VCE(sat)
VF
VF
VGE = ±25 V, VCE = 0 V
VCE = 600 V, VGE = 0 V
IC = 2 mA, VCE = 5 V
IC = 20 A, VGE = 15 V, Tc = 25
IC = 20 A, VGE = 15 V, Tc = 125
IF = 20 A, VGE = 0 V, Tc = 25
IF = 20 A, VGE = 0 V, Tc = 125
Min
3.5
Max Unit
2.78 /W
4.23
Typ. Max Unit
±100 nA
100 µA
5.5 6.5
V
1.5 2.0
1.8
1.5 2.1
1.3
2 2012-04-26
Rev.2.0
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
GT20J341
6.2. Dynamic Characteristics (Ta = 25, unless otherwise specified)
Characteristics
Input capacitance
Switching time (turn-on delay time)
Switching time (rise time)
Switching time (turn-on time)
Switching time (turn-off delay time)
Switching time (fall time)
Switching time (turn-off time)
Switching loss (turn-on switching loss)
Switching loss (turn-off switching loss)
Switching time (turn-on delay time)
Switching time (rise time)
Switching time (turn-on time)
Switching time (turn-off delay time)
Switching time (fall time)
Switching time (turn-off time)
Switching loss (turn-on switching loss)
Switching loss (turn-off switching loss)
Reverse recovery time
Symbol
Test Condition
Cies
td(on)
tr
ton
td(off)
tf
toff
Eon
Eoff
td(on)
tr
ton
td(off)
tf
toff
Eon
Eoff
trr
VCE = 10 V, VGE = 0 V, f = 100 kHz
Inductive load
VCC = 300 V, IC = 20 A,
VGG = +15 V/0 V, RG = 33 Ω
Tc = 25,
See Fig. 6.2.1, 6.2.2, 6.2.3
Inductive load
VCC = 300 V, IC = 20 A,
VGG = +15 V/0 V, RG = 33 Ω
Tc = 125,
See Fig. 6.2.1, 6.2.2, 6.2.3
IF = 20 A, di/dt = -100 A/µs
Min Typ. Max Unit
1790
0.06
0.04
0.16
0.24
0.05
0.35
0.5
0.4
0.07
0.04
0.2
0.23
0.09
0.37
0.6
0.5
90
pF
µs
mJ
µs
mJ
ns
Fig. 6.2.1 Test Circuit of Switching Time
Fig. 6.2.2 Timing Chart of Switching Time
Fig. 6.2.3 Timing Chart of Switching Loss
3
2012-04-26
Rev.2.0
Free Datasheet http://www.datasheet4u.com/
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| Номер в каталоге | Описание | Производители |
| GT20J341 | Discrete IGBTs Silicon N-Channel IGBT | Toshiba |
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