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STD18N55M5 PDF даташит
| Спецификация STD18N55M5 изготовлена «STMicroelectronics» и имеет функцию, называемую «N-channel Power MOSFET». |
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Детали детали
| Номер произв | STD18N55M5 |
| Описание | N-channel Power MOSFET |
| Производители | STMicroelectronics |
| логотип |  |
22 Pages
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STB18N55M5, STD18N55M5
STF18N55M5, STP18N55M5
N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET
in D²PAK, DPAK, TO-220FP and TO-220
Features
Order codes
STB18N55M5
STD18N55M5
STF18N55M5
STP18N55M5
VDSS
@TJmax
550 V
RDS(on)
max
< 0.24 Ω
■ DPAK worldwide best RDS(on)
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
ID
13 A
Application
Switching applications
Description
The devices are N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
3
1
D²PAK
3
1
DPAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB18N55M5
STD18N55M
STF18N55M5
STP18N55M5
Marking
18N55M5
Package
D²PAK
DPAK
TO-220FP
TO-220
March 2011
Doc ID 17078 Rev 2
Packaging
Tape and reel
Tube
1/22
www.st.com
22
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Contents
Contents
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22
Doc ID 17078 Rev 2
Free Datasheet http://www.datasheet4u.com/
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STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220, DPAK,
D²PAK
TO-220FP
VGS
ID
ID
IDM (2)
PTOT
IAR
EAS
dv/dt (3)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. ISD ≤13 A, di/dt ≤400 A/µs, VPeak < V(BR)DSS, VDD = 400 V.
25
13
8.3
52
90
4
13 (1)
8.3 (1)
52 (1)
25
200
15
2500
- 55 to 50
150
Unit
V
A
A
A
W
A
mJ
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
DPAK D²PAK TO-220 TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb Thermal resistance junction-pcb max
Tl
Maximum lead temperature for soldering
purpose
50
1.39
30
5
62.5
300
°C/W
°C/W
°C/W
°C
Doc ID 17078 Rev 2
3/22
Free Datasheet http://www.datasheet4u.com/
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| Номер в каталоге | Описание | Производители |
| STD18N55M5 | N-channel Power MOSFET | STMicroelectronics |
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