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STB18N65M5 PDF даташит
| Спецификация STB18N65M5 изготовлена «STMicroelectronics» и имеет функцию, называемую «N-channel Power MOSFET». |
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Детали детали
| Номер произв | STB18N65M5 |
| Описание | N-channel Power MOSFET |
| Производители | STMicroelectronics |
| логотип |  |
18 Pages
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STB18N65M5, STD18N65M5
N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET
in D²PAK and DPAK packages
Datasheet — production data
Features
Order codes
STB18N65M5
STD18N65M5
VDSS @ RDS(on)
TJmax
max
ID
710 V < 0.22 Ω 15 A
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
TAB
2
1
D2PAK
3
TAB
23
1
DPAK
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1. Device summary
Order codes
STB18N65M5
STD18N65M5
Marking
18N65M5
Package
D2PAK
DPAK
Packaging
Tape and reel
July 2012
This is information on a product in full production.
Doc ID 023446 Rev 1
1/18
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Contents
Contents
STB18N65M5, STD18N65M5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
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STB18N65M5, STD18N65M5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
dv/dt (1) Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. ISD ≤ 15 A, di/dt ≤400 A/µs; VDSPeak < V(BR)DSS, VDD = 400 V
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Value
D2PAK
DPAK
± 25
15
9.4
60
110
15
- 55 to 150
150
Value
D2PAK
DPAK
1.14
30
50
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax )
Single pulse avalanche energy
EAS (starting TJ = 25 °C, ID= IAR; VDD=50 V)
Value
4
210
Unit
V
A
A
A
W
V/ns
°C
°C
Unit
°C/W
°C/W
Unit
A
mJ
Doc ID 023446 Rev 1
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| STB18N65M5 | N-channel Power MOSFET | STMicroelectronics |
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