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HBTA8A60 PDF даташит
| Спецификация HBTA8A60 изготовлена «SHANTOU HUASHAN» и имеет функцию, называемую «INNER INSULATED TYPE TRIAC». |
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Детали детали
| Номер произв | HBTA8A60 |
| Описание | INNER INSULATED TYPE TRIAC |
| Производители | SHANTOU HUASHAN |
| логотип |  |
3 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
HBTA8A60
Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-state Current(IT(RMS)=8A)
* High Commutation dv/dt
General Description
The Triac HBTA8A60 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
Absolute Maximum Ratings Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PGM Peak Gate Power Dissipation
VDRM Repetitive Peak Off-State Voltage
IT RMS
R.M.S On-State Current Ta=89
VG M Peak Gate Voltage
IGM Peak Gate Current
ITSM Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)
VISO RMS Isolation Breakdown Voltage
Electrical Characteristics Ta=25
40~125
40~125
5W
600V
8A
10V
2.0A
80/88A
2500V
Symbol
Items
IDRM
VTM
I+GT1
I- GT1
I-GT3
V+ GT1
V- GT1
V- GT3
VGD
(dv/dt)c
Rth(j-c)
IH
Repetitive Peak Off-State Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Current
Gate Trigger Current
Gate Trigger Voltage
Gate Trigger Voltage
Gate Trigger Voltage
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Thermal Resistance
Holding Current
Min.
0.2
10
15
Max.
2.0
1.4
30
30
30
1.5
1.5
1.5
3.7
Unit Conditions
VD=VDRM, Single Phase,Half
mA Wave, TJ=125
V IT=12A, Inst. Measurement
mA VD=6V, RL=10 ohm
mA
mA
V
V
V
V
V/µS
/W
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
VD=6V, RL=10 ohm
TJ=125 ,VD=1/2VDRM
TJ=125 ,VD=2/3VDRM
(di/dt)c=-4.0A/ms
Junction to case
mA
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
Shantou Huashan Electronic Devices Co.,Ltd.
HBTA8A60
Performance Curves
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
10
1
0.1
101
102
Gate Current (mA)
103
Fig 3. Gate Trigger Voltage vs. Junction
Temperature
On-State Voltage [V]
Fig 4. On State Current vs. Maximum
Power Dissipation
Junction Temperature [
Fig 5. On State Current vs.
Allowable Case Temperature
RMS On-State Current [A]
Fig 6. Surge On-State Current Rating
( Non-Repetitive )
RMS On-State Current [A]
100 101
Time Cycles
102
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
Shantou Huashan Electronic Devices Co.,Ltd.
HBTA8A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
Junction Temperature [
Fig 9. Gate Trigger Characteristics Test Circuit
Test Procedure
Test Procedure
Test Procedure
Free Datasheet http://www.datasheet4u.com/
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| Номер в каталоге | Описание | Производители |
| HBTA8A60 | INNER INSULATED TYPE TRIAC | SHANTOU HUASHAN |
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