DataSheet26.com

MDI75-12A3 PDF даташит

Спецификация MDI75-12A3 изготовлена ​​​​«IXYS» и имеет функцию, называемую «IGBT Modules».

Детали детали

Номер произв MDI75-12A3
Описание IGBT Modules
Производители IXYS
логотип IXYS логотип 

4 Pages
scroll

No Preview Available !

MDI75-12A3 Даташит, Описание, Даташиты
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
MII 75-12 A3 MID 75-12 A3
MDI 75-12 A3
IC25 = 90 A
VCES
= 1200 V
VCE(sat) typ. = 2.2 V
MII
1
MID
1
MDI
1
7
63
7
36
3
4
5
2
4
5
2
2
2
1
4
5
36
7
E 72873
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC80
ICM
tSC
(SCSOA)
RBSOA
Ptot
TJ
Tstg
VISOL
Md
Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 20 kW
Continuous
Transient
TC = 25°C
TC = 80°C
TC = 80°C, tp = 1 ms
VGE = ±15 V, VCE = VCES, TJ = 125°C
RG = 22 W, non repetitive
VGE= ±15 V, TJ = 125°C, RG = 22 W
Clamped inductive load, L = 100 mH
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Insulating material: Al2O3
Mounting torque (module)
(teminals)
dS
dA
a
Weight
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Typical
Data according to a single IGBT/FRED unless otherwise stated.
Maximum Ratings
1200
1200
±20
±30
90
60
120
10
V
V
V
V
A
A
A
ms
ICM = 100
VCEK < VCES
370
150
-40 ... +150
4000
4800
A
W
°C
°C
V~
V~
2.25-2.75
20-25
2.5-3.7
22-33
12.7
9.6
50
130
4.6
Nm
lb.in.
Nm
lb.in.
mm
mm
m/s2
g
oz.
Features
q NPT IGBT technology
q low saturation voltage
q low switching losses
q switching frequency up to 30 kHz
q square RBSOA, no latch up
q high short circuit capability
q positive temperature coefficient for
easy parallelling
q MOS input, voltage controlled
q ultra fast free wheeling diodes
q package with DCB ceramic base plate
q isolation voltage 4800 V
q UL registered E72873
Advantages
q space and weight savings
q reduced protection circuits
Typical Applications
q AC and DC motor control
q AC servo and robot drives
q power supplies
q welding inverters
© 2000 IXYS All rights reserved
1-4
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

MDI75-12A3 Даташит, Описание, Даташиты
MII 75-12 A3 MID 75-12 A3
MDI 75-12 A3
Symbol
V(BR)CES
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
RthJC
RthJS
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE = 0 V
IC = 2 mA, VCE = VGE
VCE = VCES
VCE = 0 V, VGE = ±20 V
IC = 50 A, VGE = 15 V
TJ = 25°C
TJ = 125°C
VCE = 25 V, VGE = 0 V, f = 1 MHz
Inductive load, TJ = 125°C
IC = 50 A, VGE = ±15 V
VCE = 600 V, RG = 22 W
with heatsink compound
1200
4.5
V
6.5 V
4 mA
6 mA
±200 nA
2.2 2.7 V
3.3 nF
0.5 nF
0.22 nF
100 ns
70 ns
500 ns
70 ns
7.6 mJ
5.6 mJ
0.33 K/W
0.66 K/W
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF
IRM
trr
RthJC
RthJS
IF = 50 A, VGE = 0 V,
IF = 50 A, VGE = 0 V, TJ = 125°C
TC = 25°C
TC = 80°C
IF = 50 A, VGE = 0 V, -diF/dt = 400 A/ms
TJ = 125°C, VR = 600 V
with heatsink compound
2.2 2.5 V
1.8 1.9 V
100 A
60 A
40 A
200 ns
0.66 K/W
1.32 K/W
Dimensions in mm (1 mm = 0.0394")
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.5 V; R0 = 20.1 mW
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 10.8 mW
Thermal Response
© 2000 IXYS All rights reserved
IGBT (typ.)
Cth1 = 0.13 J/K; Rth1 = 0.323 K/W
Cth2 = 0.32 J/K; Rth2 = 0.008 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.10 J/K; Rth1 = 0.645 K/W
Cth2 = 0.18 J/K; Rth2 = 0.013 K/W
2-4
Free Datasheet http://www.datasheet4u.com/









No Preview Available !

MDI75-12A3 Даташит, Описание, Даташиты
120
A
100
IC
80
TJ = 25°C
60
VGE=17V
15V
13V
11V
40
9V
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 V
VCE
Fig. 1 Typ. output characteristics
120
A VCE = 20V
100 TJ = 25°C
IC 80
60
40
20
0
5 6 7 8 9 10 11 V
VGE
Fig. 3 Typ. transfer characteristics
20
V
VGE 15
VCE = 600V
IC = 50A
10
5
0
0 50 100 150 200 250 nC
QG
Fig. 5 Typ. turn on gate charge
© 2000 IXYS All rights reserved
MII 75-12 A3 MID 75-12 A3
MDI 75-12 A3
120
A TJ = 125°C
100
IC
80
60
VGE=17V
15V
13V
11V
40 9V
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V
VCE
Fig. 2 Typ. output characteristics
180
1A50
IF
120
TJ = 125°C
TJ = 25°C
90
60
30
0
0 1 2 3 V4
VF
Fig. 4 Typ. forward characteristics of
free wheeling diode
120
A
IRM
80
trr
300
ns
trr
200
40
IRM
TJ = 125°C
VR = 600V
IF = 50A
100
75-12
00
0 200 400 600 8A00/ms 1000
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode
3-4
Free Datasheet http://www.datasheet4u.com/










Скачать PDF:

[ MDI75-12A3.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
MDI75-12A3IGBT ModulesIXYS Corporation
IXYS Corporation
MDI75-12A3IGBT ModulesIXYS
IXYS

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск