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P6SMB200A PDF даташит
| Спецификация P6SMB200A изготовлена «Vishay Siliconix» и имеет функцию, называемую «Surface Mount TRANSZORB Transient Voltage Suppressors». |
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Детали детали
| Номер произв | P6SMB200A |
| Описание | Surface Mount TRANSZORB Transient Voltage Suppressors |
| Производители | Vishay Siliconix |
| логотип |  |
5 Pages
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P6SMB Series
Vishay General Semiconductor
Surfacewww.DataSheet4U.com Mount TRANSZORB® Transient Voltage Suppressors
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
VBR uni-directional
VBR bi-directional
PPPM
PD
IFSM (uni-directional only)
TJ max.
6.8 V to 540 V
6.8 V to 220 V
600 W
5.0 W
100 A
150 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g.
P6SMB10CA).
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of
sensor units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1)
Peak pulse current with a 10/1000 µs waveform (1)
Power dissipation on infinite heatsink TA = 50 °C ,
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
SYMBOL
PPPM
IPPM
PD
IFSM
TJ, TSTG
VALUE
600
See next table
5.0
100
- 65 to + 150
UNIT
W
A
W
A
°C
Document Number: 88370 For technical questions within your region, please contact one of the following:
Revision: 21-Oct-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
No Preview Available ! |
P6SMB Series
Vishay General Semiconductor
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
GENERAL
SEMICONDUCTOR
PART NUMBER
DEVICE
MARKING
CODE
UNI BI
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
MIN. MAX.
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (3) (µA)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (2) (A)
P6SMB6.8A
P6SMB7.5A
P6SMB8.2A
P6SMB9.1A
P6SMB10A
P6SMB11A
P6SMB12A
P6SMB13A
P6SMB15A
P6SMB16A
P6SMB18A
P6SMB20A
P6SMB22A
P6SMB24A
P6SMB27A
P6SMB30A
P6SMB33A
P6SMB36A
P6SMB39A
P6SMB43A
P6SMB47A
P6SMB51A
P6SMB56A
P6SMB62A
P6SMB68A
P6SMB75A
P6SMB82A
P6SMB91A
P6SMB100A
P6SMB110A
P6SMB120A
P6SMB130A
P6SMB150A
P6SMB160A
P6SMB170A
P6SMB180A
P6SMB200A
P6SMB220A
P6SMB250A
P6SMB300A
P6SMB350A
P6SMB400A
P6SMB440A
P6SMB480A
P6SMB510A
P6SMB540A
6V8A
7V5A
8V2A
9V1A
10A
11A
12A
13A
15A
16A
18A
20A
22A
24A
27A
30A
33A
36A
39A
43A
47A
51A
56A
62A
68A
75A
82A
91A
100A
110A
120A
130A
150A
160A
170A
180A
200A
220A
250A
300A
350A
400A
440A
480A
510A
540A
6V8C
7V5C
8V2C
9V1C
10C
11C
12C
13C
15C
16C
18C
20C
22C
24C
27C
30C
33C
36C
39C
43C
47C
51C
56C
62C
68C
75C
82C
91C
100C
110C
120C
130C
150C
160C
170C
180C
200C
220C
-
-
-
-
-
-
-
-
6.45
7.13
7.79
8.65
9.50
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
105
114
124
143
152
162
171
190
209
237
285
333
380
418
456
485
513
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
231
263
315
368
420
462
504
535
567
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.80 1000 57.1
6.40 500 53.1
7.02 200 49.6
7.78 50 44.8
8.55 10 41.4
9.40 5.0 38.5
10.2 5.0 35.9
11.1 5.0 33.0
12.8 1.0 28.3
13.6 1.0 26.7
15.3 1.0 23.8
17.1 1.0 21.7
18.8 1.0 19.6
20.5 1.0 18.1
23.1 1.0 16.0
25.6 1.0 14.5
28.2 1.0 13.1
30.8 1.0 12.0
33.3 1.0 11.1
36.8 1.0 10.1
40.2 1.0
9.3
43.6 1.0
8.6
47.8 1.0
7.8
53.0 1.0
7.1
58.1 1.0
6.5
64.1 1.0
5.8
70.1 1.0
5.3
77.8 1.0
4.8
85.5 1.0
4.4
94.0 1.0
3.9
102 1.0 3.6
111 1.0 3.4
128 1.0 2.9
136 1.0 2.7
145 1.0 2.6
154 1.0 2.4
171 1.0 2.2
185 1.0 1.8
214 1.0 1.74
256 1.0 1.45
300 1.0 1.24
342 1.0 1.10
376 1.0 1.00
408 1.0 0.91
434 1.0 0.86
459 1.0 0.81
Notes:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types with VWM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) VF = 3 V at IF = 50 A (uni-directional only)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
MAXIMUM
TEMP.
COEFFICIENT
OF VBR
(%/°C)
10.5 0.057
11.3 0.061
12.1 0.065
13.4 0.068
14.5 0.073
15.6 0.075
16.7 0.078
18.2 0.081
21.2 0.084
22.5 0.086
25.2 0.088
27.7 0.090
30.6 0.092
33.2 0.094
37.5 0.096
41.4 0.097
45.7 0.098
49.9 0.099
53.9 0.100
59.3 0.101
64.8 0.101
70.1 0.102
77.0 0.103
85.0 0.104
92.0 0.104
103 0.105
113 0.105
125 0.106
137 0.106
152 0.107
165 0.107
179 0.107
207 0.108
219 0.108
234 0.108
246 0.108
274 0.108
328 0.108
344 0.110
414 0.110
482 0.110
548 0.110
602 0.110
658 0.110
698 0.110
740 0.110
www.vishay.com
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For technical questions within your region, please contact one of the following: Document Number: 88370
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 21-Oct-08
No Preview Available ! |
P6SMB Series
Vishay General Semiconductor
www.DataSheet4U.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Thermal resistance, junction to ambient air (1)
RθJA
Thermal resistance, junction to leads
RθJL
Note:
(1) Mounted on minimum recommended pad layout
VALUE
100
20
UNIT
°C/W
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
P6SMB6.8A-E3/52
0.096
52
P6SMB6.8A-E3/5B
P6SMB6.8AHE3/52 (1)
P6SMB6.8AHE3/5B (1)
0.096
0.096
0.096
5B
52
5B
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
10
150
tr = 10 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
100
Peak Value
IPPM
where the Peak Current
decays to 50 % of IPPM
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs 100 µs 1.0 ms
td - Pulse Width (s)
10 ms
Figure 1. Peak Pulse Power Rating Curve
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0 1.0 2.0 3.0
t - Time (ms)
Figure 3. Pulse Waveform
4.0
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temperature (°C)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
6000
1000
Measured at
Zero Bias
VR, Measured at
100 Stand-Off Voltage VWM
10
1
Uni-Directional
Bi-Directional
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10 100
VWM - Reverse Stand-Off Voltage (V)
200
Figure 4. Typical Junction Capacitance
Document Number: 88370 For technical questions within your region, please contact one of the following:
Revision: 21-Oct-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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