BVSS138L PDF даташит
Спецификация BVSS138L изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | BVSS138L |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
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BSS138L, BVSS138L
Power MOSFET
200 mA, 50 V
N−Channel SOT−23
Typical applications are DC−DC converters, power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
• Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for
Low Voltage Applications
• Miniature SOT−23 Surface Mount Package Saves Board Space
• BVSS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
200 mA, 50 V
RDS(on) = 3.5 W
N−Channel
3
1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
50
± 20
200
800
225
− 55 to 150
Vdc
Vdc
mA
mW
°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING
DIAGRAM
J1 M G
G
1
J1 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BSS138LT1G
SOT−23 3000 / Tape & Reel
(Pb−Free)
BVSS138LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
BSS138LT3G
SOT−23 10,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
July, 2013 − Rev. 8
1
Publication Order Number:
BSS138LT1/D
Free Datasheet http://www.datasheet4u.com/
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BSS138L, BVSS138L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 150°C)
Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate−Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain−to−Source On−Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
V(BR)DSS
IDSS
IGSS
50
−
−
−
−
− − Vdc
mAdc
− 0.1
− 0.5
− 5.0
− ±0.1 mAdc
VGS(th)
rDS(on)
gfs
0.5 −
− 5.6
−−
100 −
1.5 Vdc
W
10
3.5
− mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Ciss
Coss
Crss
td(on)
td(off)
− 40 50 pF
− 12 25
− 3.5 5.0
− − 20 ns
− − 20
http://onsemi.com
2
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No Preview Available ! |
BSS138L, BVSS138L
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
TJ = 25°C
0.7
0.6
0.5
0.4
0.3
VGS = 3.5 V
VGS = 3.25 V
VGS = 3.0 V
VGS = 2.75 V
VGS = 2.5 V
0.2
0.1
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.9
VDS = 10 V
0.8
0.7
0.6
- 55°C
25°C
150°C
0.5
0.4
0.3
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
- 55
VGS = 10 V
ID = 0.8 A
VGS = 4.5 V
ID = 0.5 A
-5 45 95
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On−Resistance Variation with
Temperature
145
1.25
1.125
ID = 1.0 mA
1
0.875
0.75
- 55
-30 -5 20 45 70 95 120
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Threshold Voltage Variation
with Temperature
145
10
VDS = 40 V
TJ = 25°C
8
1.0E-5
1.0E-6
150°C
6
4
ID = 200 mA
2
1.0E-7
1.0E-8
125°C
0 1.0E-9
0 500 1000 1500 2000 2500 3000
0 5 10 15 20 25 30 35 40 45 50
QT, TOTAL GATE CHARGE (pC)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. Gate Charge
Figure 6. IDSS
http://onsemi.com
3
Free Datasheet http://www.datasheet4u.com/
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