MMBZ5V6ALT1G PDF даташит
Спецификация MMBZ5V6ALT1G изготовлена «ON Semiconductor» и имеет функцию, называемую «(MMBZxxxALT1G) 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors». |
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Детали детали
Номер произв | MMBZ5V6ALT1G |
Описание | (MMBZxxxALT1G) 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
Производители | ON Semiconductor |
логотип |
7 Pages
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MMBZxxxALT1G Series,
SZMMBZxxxALT1G Series
24 and 40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT−23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range − 3 V to 26 V
Standard Zener Breakdown Voltage Range − 5.6 V to 33 V
Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional),
per Figure 6 Waveform
ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 mA
Flammability Rating UL 94 V−0
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
http://onsemi.com
SOT−23
CASE 318
STYLE 12
CATHODE 1
CATHODE 2
3 ANODE
MARKING DIAGRAM
xxxMG
G
1
xxx = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 13
1
Publication Order Number:
MMBZ5V6ALT1/D
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MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1) MMBZ5V6ALT1G thru MMBZ9V1ALT1G
@ TL 25C
MMBZ12VALT1G thru MMBZ33VALT1G
Total Power Dissipation on FR−5 Board (Note 2)
D@erTaAte=a2b5ovCe 25C
Ppk
PD
24 W
40
225 mW
1.8 mW/C
Thermal Resistance Junction−to−Ambient
Total Power Dissipation on Alumina Substrate (Note 3)
@ TA = 25C
Derate above 25C
RqJA
PD
556 C/W
300 mW
2.4 mW/C
Thermal Resistance Junction−to−Ambient
RqJA 417 C/W
Junction and Storage Temperature Range
TJ, Tstg
− 55 to +150
C
Lead Solder Temperature − Maximum (10 Second Duration)
TL 260 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non−repetitive current pulse per Figure 6 and derate above TA = 25C per Figure 7.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ORDERING INFORMATION
Device
Package
Shipping†
MMBZ5V6ALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZ5V6ALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ5V6ALT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZ6VxALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZ6VxALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ6VxALT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZ9V1ALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZ9V1ALT13G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBZxxVALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZMMBZxxVALT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBZxxVALT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SZMMBZxxVALT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
QVBR
IF
VF
ZZT
IZK
ZZK
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR
Forward Current
Forward Voltage @ IF
Maximum Zener Impedance @ IZT
Reverse Current
Maximum Zener Impedance @ IZK
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
24 WATTS
Device*
MMBZ5V6ALT1G/T3G
MMBZ6V2ALT1G
MMBZ6V8ALT1G
MMBZ9V1ALT1G
Device
Marking
5A6
6A2
6A8
9A1
VRWM
Volts
3.0
3.0
4.5
6.0
IR @
VRWM
mA
5.0
0.5
0.5
0.3
Breakdown Voltage
VBR (Note 4) (V)
Min Nom Max
5.32 5.6 5.88
5.89 6.2 6.51
6.46 6.8 7.14
8.65 9.1 9.56
@ IT
mA
20
1.0
1.0
1.0
Max Zener
Impedance (Note 5)
ZZT
@ IZT
W
11
−
−
−
ZZK @ IZK
W mA
1600 0.25
−−
−−
−−
VC @ IPP
(Note 6)
VC IPP QVBR
V A mV/5C
8.0 3.0 1.26
8.7 2.76 2.80
9.6 2.5 3.4
14 1.7 7.5
(VF = 0.9 V Max @ IF = 10 mA)
40 WATTS
Device*
Device VRWM
Marking Volts
IR @
VRWM
nA
Breakdown Voltage
VBR (Note 4) (V)
Min Nom Max
@ IT
mA
VC @ IPP (Note 6)
VC IPP
VA
QVBR
mV/5C
MMBZ12VALT1G
12A 8.5 200 11.40 12 12.60 1.0
17
2.35
7.5
MMBZ15VALT1G
15A 12 50 14.25 15 15.75 1.0
21
1.9
12.3
MMBZ18VALT1G
18A 14.5 50 17.10 18 18.90 1.0
25
1.6
15.3
MMBZ20VALT1G
20A 17 50 19.00 20 21.00 1.0
28
1.4
17.2
MMBZ27VALT1G/T3G 27A 22 50 25.65 27 28.35 1.0
40
1.0
24.3
MMBZ33VALT1G
33A 26 50 31.35 33 34.65 1.0
46
0.87
30.4
4. VBR measured at pulse test current IT at an ambient temperature of 25C.
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)
= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 6 and derate per Figure 7
* Include SZ-prefix devices where applicable.
http://onsemi.com
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MMBZ5V6ALT1G | 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors | ON |
MMBZ5V6ALT1G | (MMBZxxxALT1G) 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors | ON Semiconductor |
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