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Datasheet 2N4030 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N4030 | PNP SILICON PLANAR TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTORS
2N4030, 2N4031 2N4032, 2N4033
TO-39 Metal Can Package
2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE AMLIFIER, TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless s |  CDIL | transistor |
| 2 | 2N4030 | GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS
Rating
2N4026/28 2N4027/29 Symbol 2N4030/32 2N4031/33
Unit
Collector-Emitter Voltage) 1)
VCEO
60
80 Vdc
Collector-Base Voltage
VCBO
60
80 Vdc
Emitter-Base Voltage
VEBO
5.0
5.0 Vdc
—Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
|  Motorola Semiconductors | transistor |
| 3 | 2N4030 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES |  Micro Electronics | amplifier |
| 4 | 2N4030 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 7.0 7.0 6.0 6.0 7.0 7.0 7.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 7.0 6.0 5.0 5.0 5.0 5.0 3.5 6.0 --5.0 5.0 6.0 6.0 6.0 5.0 5.0 7.0 7.0 4.0 4.0 0 |  Central Semiconductor Corp | transistor |
| 5 | 2N4030 | Bipolar PNP Device 2N4030
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 60V
5.08 (0.200) typ.
I |  Seme LAB | data |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo  Unisonic Technologies mosfet | | |
| 2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee  Texas transistor | | |
| 3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I Seme LAB data | | |
| 4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
| 5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
| 6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
| 7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
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