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Datasheet 2SD968A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SD968A | Silicon PNP epitaxial planer type(For low-frequency driver amplification) Transistor
2SB789, 2SB789A
Silicon PNP epitaxial planer type
For low-frequency driver amplification Complementary to 2SD968 and 2SD968A
Unit: mm
s Features
q q
2.6±0.1
4.5±0.1 1.6±0.2
1.5±0.1
0.4max.
45°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB789 2 | Panasonic Semiconductor | transistor |
2 | 2SD968A | Silicon NPN epitaxial planer type(For low-frequency driver amplification) Transistor
2SB789, 2SB789A
Silicon PNP epitaxial planer type
For low-frequency driver amplification Complementary to 2SD968 and 2SD968A
Unit: mm
s Features
q q
2.6±0.1
4.5±0.1 1.6±0.2
1.5±0.1
0.4max.
45°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB789 2 | Panasonic Semiconductor | transistor |
3 | 2SD968A | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0968A (2SD968A)
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency driver amplification Complementary to 2SB0789A (2SB789A) ■ Features
• High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Mini power type pa | Panasonic Semiconductor | transistor |
4 | 2SD968A | Silicon NPN epitaxial planer type SMD Type
Silicon NPN epitaxial planer type 2SD968, 2SD968A
Transistors
Features
High collector to emitter voltage VCEO. Large collector power dissipation PC.
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage 2SD968 2SD968A Collector to emitter voltage 2SD968 2SD968A Emitter to | Kexin | transistor |
2SD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SD0592A | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features
0.7±0.2
Unit: mm
5.0±0.2 4.0±0.2
• Large collector power dissipation PC • Low collector-emitter saturation voltage V Panasonic Semiconductor transistor | | |
2 | 2SD0601 | Silicon NPN epitaxial planer type Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac Panasonic Semiconductor transistor | | |
3 | 2SD0601A | Silicon NPN epitaxial planer type Transistor Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and
a Panasonic Semiconductor transistor | | |
4 | 2SD0602 | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
5 | 2SD0602A | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
6 | 2SD0638 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitt Panasonic Semiconductor transistor | | |
7 | 2SD0662 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9±0.1 2.5±0.1 (1.0)
Unit: mm
(0.4)
(1.5)
2.0±0.2
• High collector-emitter voltage (Base open) VCEO • High transition frequency fT • Panasonic Semiconductor transistor | |
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Número de pieza | Descripción | Fabricantes | |
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