2SC4617PT PDF даташит
Спецификация 2SC4617PT изготовлена «Chenmko Enterprise» и имеет функцию, называемую «General Purpose NPN Transistor». |
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Детали детали
Номер произв | 2SC4617PT |
Описание | General Purpose NPN Transistor |
Производители | Chenmko Enterprise |
логотип |
3 Pages
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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
General Purpose NPN Transistor
VOLTAGE 50 Volts CURRENT 0.15 Ampere
2SC4617PT
APPLICATION
* Small Power Amplifier .
FEATURE
* Surface mount package. (SC-75/SOT-416)
* Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA)
* Low cob. Cob=2.0pF(Typ.)
* PC= 150mW (Collector power dissipation).
CONSTRUCTION
* NPN Silicon Transistor
* Epitaxial planner type
MARKING
* hFE(Q): UX
* hFE(R): UY
* hFE(S): UZ
CIRCUIT
(1) B
C (3)
E (2)
SC-75/SOT-416
0.2±00..015
1.0±0.1
0.5
0.5
1.6±0.2
0.3±00..015 0.8±0.10.2±00..015
0.15±0.05
0.1Min.
1.6±0.2
0.6~0.9
0~0.1
Dimensions in millimeters
SC-75/SOT-416
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
CONDITION
Collector - Base Voltage
Open Emitter
Collector - Emitter Voltage
Open Base
Emitter - Base Voltage
Open Collector
Collector Current DC
Collector Power Dissipation
TA ≤ 25OC
Storage Temperature
Junction Temperature
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
SYMBOL
VCBO
VCEO
VEBO
IC
PTOT
TSTG
TJ
MIN.
-
-
-
-
-
-55
-
MAX.
60
50
7
150
150
+150
+150
UNITS
Volts
Volts
Volts
mAmps
mW
oC
oC
2003-12
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
RATING CHARACTERISTICS ( 2SC4617PT )
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
PARAMETERS
CONDITION
SYMBOL
Collector Cut-off Current
IE=0; VCB=60V
ICBO
Emitter Cut-off Current
IC=0; VEB=7V
IEBO
DC Current Gain
VCE=6V; Note 1
IC=1mA; Note 2
hFE
Collector-Emitter Saturation Voltage
IC=50mA; IB=5mA
Collector-Emitter Breakdown Voltage
Output Collector Capacitance
Transition Frequency
IC=1mA
IE=ie=0; VCB=12V;
f=1MHz
IE=-2mA; VCE=12V;
f=100MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification Q: 120 to 270, R: 180 to 390, S: 270 to 560
VCEsat
VCEO
Cob
fT
MIN.
-
-
120
-
50
-
-
TYPE
-
-
-
-
-
2.0
180
MAX.
0.1
0.1
560
0.4
-
3.5
-
UNITS
uA
uA
Volts
Volts
pF
MHz
RATING CHARACTERISTIC CURVES ( 2SC4617PT )
Fig.1
50
Grounded emitter propagation
characteristics
VCE=6V
20 Ta=100OC
10
5
2
1
0.5
25OC
0.2
55OC
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.2 Grounded emitter output
characteristics (1)
100 Ta=25°C
80
0.50mA
00..4450mmAA
0.35mA
0.30mA
0.25mA
60
0.20mA
40 0.15mA
0.10mA
20 0.05mA
0 IB=0A
0 0.4 0.8 1.2 1.6 2.0
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.3 Grounded emitter output
characteristics (2)
10
Ta=25°C
30µA
27µA
8 24µA
21µA
6 18µA
15µA
4 12µA
9µA
6µA
2
3µA
0 IB=0A
0 4 8 12 16 20
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Free Datasheet http://www.datasheet4u.com/
No Preview Available ! |
RATING CHARACTERISTIC CURVES ( 2SC4617PT )
Fig.4 Collector-emitter saturation voltage
vs. collector current
0.5
IC/IB=10
0.5
0.2
Ta=100°C
0.1 25°C
−55°C
0.05
0.2
0.1
0.05
Fig.5 DC current gain vs.
collector current
IC/IB=50
Ta=100°C
25°C
−55°C
Fig. 6 Gain bandwidth product
vs. emitter current
Ta=25°C
500 VCE=6V
200
0.02 100
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC(mA)
0.01
0.2
0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC(mA)
50
−0.5 −1 −2
−5 −10 −20 −50 −100
EMITTER CURRENT : IE(mA)
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Номер в каталоге | Описание | Производители |
2SC4617PT | General Purpose NPN Transistor | Chenmko Enterprise |
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