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PDF APM2518NU Data sheet ( Hoja de datos )

Número de pieza APM2518NU
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Anpec Electronics Coropration 
Logotipo Anpec Electronics Coropration Logotipo

APM2518NU image


1. - N-Channel Enhancement Mode MOSFET






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APM2518NU
N-Channel Enhancement Mode MOSFET
Features
Pin Description
25V/50A,
RDS(ON)=8m(Typ.) @ VGS=10V
RDS(ON)=15m(Typ.) @ VGS=4.5V
Super High Dense Cell Design
Reliable and Rugged
Avalanche Rated
Lead Free and Green Devices Available
(RoHS Compliant)
GD
S
Top View of TO-252
D
Applications
G
Power Management in Desktop Computer or
DC/DC Converters
Ordering and Marking Information
S
N-Channel MOSFET
APM2518N
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM2518N U :
APM2518N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Jan., 2009
1
www.anpec.com.tw
This datasheet has been downloaded from http://www.digchip.com at thFriesepDaatgaesheet http://www.datasheet4u.com/

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APM2518NU pdf
APM2518NU
Typical Operating Characteristics (Cont.)
Output Characteristics
120
V = 7,8,9,10V
GS
100
6V
80
5V
60
4.5V
40
4V
20
3.5V
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
28
24
V =4.5V
GS
20
16
12
V =10V
GS
8
4
0
0 20 40 60 80 100 120
ID - Drain Current (A)
Drain-Source On Resistance
32
I =30A
DS
28
24
20
16
12
8
4
2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Jan., 2009
5
www.anpec.com.tw
Free Datasheet http://www.datasheet4u.com/

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