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PDF H5TQ4G63MFR-xxC Data sheet ( Hoja de datos )
| Número de pieza | H5TQ4G63MFR-xxC | |
| Descripción | 4Gb DDR3 SDRAM | |
| Fabricantes | Hynix Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de H5TQ4G63MFR-xxC (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
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4Gb DDR3 SDRAM
4Gb DDR3 SDRAM
Lead-Free&Halogen-Free
(RoHS Compliant)
H5TQ4G43MFR-xxC
H5TQ4G83MFR-xxC
H5TQ4G63MFR-xxC
* SK hyix Semiconductor reserves the right to change products or specifications without
Rev. 1.0 / Nov. 2012
1
Free Datasheet http://www.datasheet4u.com/
1 page  
Package Ballout/Mechanical Dimension
x4 Package Ball out (Top view): 78ball FBGA Package
1
2
3 456 7
8
A VSS VDD
B
VSS
VSSQ
C VDDQ DQ2
D VSSQ
NF
E
VREFDQ
VDDQ
F NC VSS
G ODT VDD
H NC
CS
J VSS BA0
K VDD
A3
L VSS
A5
M VDD
A7
N
VSS
RESET
NC
DQ0
DQS
DQS
NF
RAS
CAS
WE
BA2
A0
A2
A9
A13
NF
DM
DQ1
VDD
NF
CK
CK
A10/AP
A15
A12/BC
A1
A11
A14
VSS
VSSQ
DQ3
VSS
NF
VSS
VDD
ZQ
VREFCA
BA1
A4
A6
A8
1
2
3 456 7
8
Note: NF (No Function) - This is applied to balls only used in x4 configuration.
9
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
9
A
B
C
D
E
F
G
H
J
K
L
M
N
1 23
A
B
C
D
E
F
G
H
J
K
L
M
N
7 89
(Top View: See the balls through the Package)
Populated ball
Ball not populated
Rev. 1.0 / Nov. 2012
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
Absolute Maximum Ratings
Absolute Maximum DC Ratings
Absolute Maximum DC Ratings
Symbol
Parameter
VDD Voltage on VDD pin relative to Vss
VDDQ Voltage on VDDQ pin relative to Vss
VIN, VOUT Voltage on any pin relative to Vss
TSTG
Notes:
Storage Temperature
Rating
- 0.4 V ~ 1.80 V
- 0.4 V ~ 1.80 V
- 0.4 V ~ 1.80 V
-55 to +100
Units
V
V
V
oC
Notes
1,3
1,3
1
1, 2
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than
0.6XVDDQ,When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
DRAM Component Operating Temperature Range
Temperature Range
Symbol
TOPER
Notes:
Parameter
Normal Operating Temperature Range
Extended Temperature Range (Optional)
Rating
0 to 85
85 to 95
Units
oC
oC
Notes
1,2
1,3
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measure-
ment conditions, please refer to the JEDEC document JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. Dur-
ing operation, the DRAM case temperature must be maintained between 0 - 85oC under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85oC and 95oC
case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:
a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs. It is
also possible to specify a component with 1X refresh (tREFI to 7.8µs) in the Extended Temperature Range.
Please refer to the DIMM SPD for option availability
b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use
the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b)
or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7 = 0b).
Rev. 1.0 / Nov. 2012
11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet H5TQ4G63MFR-xxC.PDF ] | |
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