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даташит 09N20 PDF ( Datasheet )

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Номер произв 09N20
Описание GI09N20
Производители GTM
логотип GTM логотип 



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09N20 Даташит, Описание, Даташиты
Pb Free Plating Product
ISSUED DATE :2005/06/27
REVISED DATE :
GI09N20
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
200V
380m
8.6A
Description
The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Operating Junction and Storage Temperature Range
EAS
IAR
Tj, Tstg
Ratings
200
±30
8.6
5.5
36
69
0.55
40
8.6
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
1.8
110
Unit
/W
/W
GI09N20
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09N20 Даташит, Описание, Даташиты
ISSUED DATE :2005/06/27
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
200
-
2.0
-
-
--
0.24 -
- 4.0
3.7 -
- ±100
V VGS=0, ID=1mA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=5A
nA VGS= ±30V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 10 uA VDS=200V, VGS=0
- 100 uA VDS=160V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
- 380 m VGS=10V, ID=5A
23 37
ID=8.6A
4 - nC VDS=160V
13 -
VGS=10V
12 -
VDD=100V
25 -
ID=8.6A
36
-
ns VGS=10V
RG=10
16 -
RD=11.6
500 800
90 -
40 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
225
2260
Max.
1.3
-
-
Unit Test Conditions
V IS=8.6A, VGS=0V
ns IS=8.6A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=1mH, RG=25 , IAS=8.6A.
3. Pulse width 300us, duty cycle 2%.
GI09N20
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09N20 Даташит, Описание, Даташиты
Characteristics Curve
ISSUED DATE :2005/06/27
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GI09N20
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4
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