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PDF 2SA1858 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1858 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SA1858
Silicon PNP epitaxial planer type
For general amplification
s Features
q High collector to emitter voltage VCEO.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–300
–300
–5
–100
–70
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
˚C
˚C
0.7±0.1
1.27
0.45
+0.15
–0.1
0.45
+0.15
–0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = –100µA, IB = 0
IE = –1µA, IC = 0
VCE = –10V, IC = –5mA
–300
–5
30
V
V
150
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = –1mA
– 0.6
V
Transition frequency
fT
VCB = –10V, IE = 10mA, f = 200MHz
50
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
7 pF
*hFE Rank classification
Rank
P
hFE 30 ~ 100
Q
60 ~ 150
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SA1858.PDF ] | |
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