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Номер произв Z0103MA0
Описание 4Q Triac Direct interfacing to logic level ICs
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 
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Z0103MA0 Даташит, Описание, Даташиты
Z0103MA0
4Q Triac
Rev. 01 — 3 January 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package
intended for use in applications requiring enhanced noise immunity and direct interfacing
to logic ICs and low power gate drivers.
1.2 Features and benefits
„ Direct interfacing to logic level ICs
„ Enhanced current surge capability
„ Enhanced noise immunity
„ High blocking voltage capability
„ Sensitive gate triggering in all four
quadrants
1.3 Applications
„ General purpose low power motor
control
„ Home appliances
„ Industrial process control
„ Low power AC Fan controllers
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDRM
repetitive peak off-state
voltage
ITSM
non-repetitive peak
full sine wave; Tj(init) = 25 °C;
on-state current
tp = 20 ms; see Figure 4;
see Figure 5
IT(RMS)
RMS on-state current
full sine wave; Tlead 38 °C;
see Figure 3; see Figure 1;
see Figure 2
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; see Figure 7
Min Typ Max Unit
- - 600 V
- - 12.5 A
- - 1A
0.2 -
0.2 -
0.2 -
0.2 -
3 mA
3 mA
3 mA
5 mA
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Z0103MA0 Даташит, Описание, Даташиты
NXP Semiconductors
Z0103MA0
4Q Triac
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
T2 main terminal 2
G gate
T1 main terminal 1
Simplified outline
Graphic symbol
T2
sym051
T1
G
3. Ordering information
321
SOT54 (TO-92)
Table 3. Ordering information
Type number
Package
Name
Z0103MA0
TO-92
4. Limiting values
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max Unit
VDRM
IT(RMS)
repetitive peak off-state voltage
RMS on-state current
full sine wave; Tlead 38 °C; see Figure 3;
see Figure 1; see Figure 2
-
-
600 V
1A
ITSM
non-repetitive peak on-state
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
-
12.5 A
current
see Figure 4; see Figure 5
I2t
dIT/dt
I2t for fusing
rate of rise of on-state current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
tp = 10 ms; sine-wave pulse
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs;
T2+ G+
-
-
-
13.8
0.78
50
A
A2s
A/µs
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs;
T2+ G-
-
50 A/µs
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs;
T2- G-
-
50 A/µs
IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs;
T2- G+
-
20 A/µs
IGM
PGM
PG(AV)
Tstg
Tj
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
- 1A
- 2W
- 0.1 W
-40 150 °C
- 125 °C
Z0103MA0
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 3 January 2011
© NXP B.V. 2011. All rights reserved.
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Z0103MA0 Даташит, Описание, Даташиты
NXP Semiconductors
Z0103MA0
4Q Triac
16
IT(RMS)
(A)
12
8
4
0
10-2
10-1
003aac263
1 10
surge duration (s)
1.2
IT(RMS)
(A)
0.8
003aac264
0.4
0
50
0
50 100 150
Tlead (°C)
Fig 1. RMS on-state current as a function of surge
duration; maximum values
2.0
Ptot
(W)
1.6
1.2
conduction form
angle factor
(degrees) a
30 4
60 2.8
90 2.2
120 1.9
180 1.57
0.8
α
0.4
Fig 2. RMS on-state current as a function of lead
temperature; maximum values
003aac259
α= 180°
120°
90°
60°
30°
0.0
0
0.2 0.4 0.6 0.8
1 1.2
IT(RMS) (A)
Fig 3. Total power dissipation as a function of RMS on-state current; maximum values
Z0103MA0
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 3 January 2011
© NXP B.V. 2011. All rights reserved.
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