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7N70 PDF даташит

Спецификация 7N70 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 7N70
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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7N70 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
7N70
7 Amps, 700 Volts
N-CHANNEL POWER MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 7N70 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
„ FEATURES
* RDS(ON) = 1.5@VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 18 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
2.Drain
http://www.DataSheet4U.com/
1.Gate
3.Source
„ ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
7N70L-TF3-T
7N70G-TF3-T
7N70L-TF1-T
7N70G-TF1-T
Package
TO-220F
TO-220F1
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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7N70 Даташит, Описание, Даташиты
7N70
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 700 V
Gate-Source Voltage
Continuous Drain Current
Drain Current Pulsed (Note 1)
TC = 25°C
TC = 100°C
VGSS
ID
IDM
±30
7.0
4.7
28
V
A
A
A
Avalanche Energy, Single Pulsed (Note 2)
Avalanche Energy, Repetitive, Limited by TJMAX
EAS
EAR
530 mJ
14.2 mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5 V/ns
Power Dissipation (TC = 25°C)
TO-220F
TO-220F1
PD
142 W
48 W
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220F
TO-220F1
TO-220F
TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
62.5
0.88
2.6
UNIT
°C/W
°C/W
°C/W
°C/W
„ ELECTRICAL CHARACTERISTICS (TC =25, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF Characteristics
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Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250 μA
Drain-Source Leakage Current
IDSS
VDS = 700 V, VGS = 0 V
VDS = 560 V, TC = 125°C
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature
Coefficient
BVDSS/TJ ID = 250 μA, Referenced to 25°C
ON Characteristics
Gate Threshold Voltage
Drain-Source ON-State Resistance
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 3.5 A
VDS = 40 V, ID = 3.5 A (Note 4)
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V, f = 1MHz
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QDD
VDD = 350V, ID = 7.0 A
(Note 4, 5)
VDS= 560V, ID= 7.0A, VGS= 10 V
(Note 4, 5)
MIN TYP MAX UNIT
700 V
1 μA
1 μA
100 nA
-100 nA
0.67 V/
2.0 4.0
1.35 1.5
8.0
V
S
1200 1600
150 190
18 25
pF
pF
pF
35 80 ns
79 165 ns
80 160 ns
52 120 ns
30 nC
6.5 nC
13 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7N70 Даташит, Описание, Даташиты
7N70
„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Source- Drain Diode Ratings and Characteristics
Drain-Source Diode Forward Voltage
VSD
Maximum Continuous Drain-Source
Diode Forward Current
IS
VGS = 0 V, IS =7.0 A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
tRR VGS = 0 V, IS = 7.0 A,
Reverse Recovery Charge
QRR dIF/dt = 100 A/μs (Note 4)
Notes: 1. Repetitive Rating : Pulse width limited by TJ
2. L = 19.5mH, IAS = 7.0A, VDD = 50V, RG = 0 , Starting TJ = 25°C
3. ISD 7.0A, di/dt 100A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty cycle 2%
5. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
1.4 V
7.0 A
28 A
320 ns
2.4 μC
http://www.DataSheet4U.com/
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7N70N-CHANNEL POWER MOSFETUnisonic Technologies
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