2SA1013 PDF даташит
Спецификация 2SA1013 изготовлена «Toshiba Semiconductor» и имеет функцию, называемую «Silicon PNP Epitaxial Type Transistor». |
|
Детали детали
Номер произв | 2SA1013 |
Описание | Silicon PNP Epitaxial Type Transistor |
Производители | Toshiba Semiconductor |
логотип |
4 Pages
No Preview Available ! |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1013
Color TV Verttical Deflection Output Applications
Power Switching Applications
2SA1013
Unit: mm
• High voltage: VCEO = −160 V
• Large continuous collector current capability
• Recommended for vertical deflection output & sound output
applications for line-operated TV.
• Complementary to 2SC2383.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
−160
−160
−6
−1
−0.5
900
150
−55 to 150
Electrical Characteristics (Ta = 25°C)
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = −150 V, IE = 0
IEBO
VEB = −6 V, IC = 0
V (BR) CEO IC = −10 mA, IB = 0
hFE (Note) VCE = −5 V, IC = −200 mA
VCE (sat) IC = −500 mA, IB = −50 mA
VBE VCE = −5 V, IC = −5 mA
fT VCE = −5 V, IC = −200 mA
Cob VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE classification R: 60 to 120, O: 100 to 200
Min Typ. Max Unit
⎯ ⎯ −1.0 µA
⎯ ⎯ −1.0 µA
−160 ⎯
⎯
V
60 ⎯ 200
⎯
⎯ −1.5
V
−0.45 ⎯ −0.75 V
15 50 ⎯ MHz
⎯ ⎯ 35 pF
Marking
A1013
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-07
No Preview Available ! |
−1.0
−0.8
−0.6
−0.4
−0.2
0
0
IC – VCE
−15 −12
Common emitter
−10 Ta = 25°C
−8
−6
−4.5
−3
−2
IB = −1 mA
0
−4 −8 −12 −16 −20 −24
Collector-emitter voltage VCE (V)
−28
2SA1013
hFE – IC
300
100 −10
−5
50
VCE = −2 V
30
10
Common emitter
Ta = 25°C
5
−10 −30
−100
−300
Collector current IC (A)
−1000
300
Ta = 100°C
100 25
0
50
30
hFE – IC
10 Common emitter
VCE = −10 V
VCE = −5 V
5
−10 −30
−100
−300
Collector current IC (mA)
−1000
−3
Common emitter
Ta = 25°C
−1
VCE (sat) – IC
−0.5
−0.3
−0.1
−0.05
−0.03
−5
IC/IB = 10
5
−10 −30
−100
−300
Collector current IC (A)
−1000
VCE (sat) – IC
−3
Common emitter
IC/IB = 10
−1
−0.5
−0.3
−0.1 Ta = 100°C
−0.05
−0.03
−5
−10
25
0
−30
−100
−300
Collector current IC (A)
−1000
IC – VBE
−1.0
Common emitter
VCE = −5 V
−0.8
Ta = 100°C
−0.6
25
0
−0.4
−0.2
−00 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
Base-emitter voltage VBE (V)
2 2004-07-07
No Preview Available ! |
fT – IC
300
100
VCE = −5 V
50
−2
30
10
Common emitter
5 Ta = 25°C
3
-1 −3
−10
−30 −100
Collector current IC (A)
−300
2SA1013
Cob – VCB
300
Common emitter
f = 1 MHz
Ta = 25°C
100
50
30
10
5
3
-1 −3
−10
−30
−100
−300
Collector-base voltage VCE (V)
Safe Operating Area
−3
IC max (pulsed)*
1 ms*
−1 100 ms*
10 ms*
−0.5
−0.3 Thermal limited
−0.1
IC max = −1.0 A
−0.05 DC operation
Ta = 25°C
−0.03
S/B limited
VCEO max
*: Single nonrepetitive pulse
−0.01 Ta = 25°C
Curves must be derated linearly
with increase in temperature.
−0.003
−1 −3 −10 −30 −100
Collector-emitter voltage VCE (V)
−300
3 2004-07-07
Скачать PDF:
[ 2SA1013.PDF Даташит ]
Номер в каталоге | Описание | Производители |
2SA101 | (2SA100 - 2SA104) Ge PNP Drift | ETC |
2SA1010 | SILICON POWER TRANSISTOR | NEC |
2SA1010 | Silicon POwer Transistors | SavantIC |
2SA1010 | Trans GP BJT PNP 100V 7A 3-Pin(3+Tab) MP-25 | New Jersey Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |