2SA1010 PDF даташит
Спецификация 2SA1010 изготовлена «NEC» и имеет функцию, называемую «SILICON POWER TRANSISTOR». |
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Детали детали
Номер произв | 2SA1010 |
Описание | SILICON POWER TRANSISTOR |
Производители | NEC |
логотип |
6 Pages
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DATA SHEET
SILICON POWER TRANSISTOR
2SA1010
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
The 2SA1010 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and high-
frequency power amplifiers.
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2334
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
Total power dissipation
IB(DC)
PT (Tc = 25 °C)
Total power dissipation
PT (Ta = 25 °C)
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 300 µs, duty cycle ≤ 10%
Ratings
−100
−100
−7.0
−7.0
−15
−3.5
40
1.5
150
−55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Pin Connection
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16118EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
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ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage VCEO(SUS) IC = −5.0 A, IB1 = −0.5 A, L = 1 mH
Collector to emitter voltage VCEX(SUS)1 IC = −5.0 A, IB1 = −IB2 = −0.5 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
Collector to emitter voltage VCEX(SUS)2 IC = −10 A, IB1 = −1.0 A, IB2 = −0.5 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
Collector cutoff current
ICBO VCB = −100 V, IE = 0
Collector cutoff current
ICER VCE = −100 V, RBE = 51 Ω, Ta = 125 °C
Collector cutoff current
ICEX1
VCE = −100 V, VBE(OFF) = 1.5 V
Collector cutoff current
ICEX2
VCE = −100 V, VBE(OFF) = 1.5 V,
Ta = 125 °C
Emitter cutoff current
IEBO VEB = −5.0 V, IC = 0
DC current gain
hFE1 VCE = −5.0 V, IC = −0.5 A*
DC current gain
hFE2 VCE = −5.0 V, IC = −3.0 A*
DC current gain
hFE3 VCE = −5.0 V, IC = −5.0 A*
Collector saturation voltage VCE(sat) IC = −5.0 A, IB = −0.5 A*
Base saturation voltage
VBE(sat) IC = −5.0 A, IB = −0.5 A*
Turn-on time
Storage time
Fall time
ton IC = −5.0 A, RL = 10 Ω,
tstg IB1 = −IB2 = −0.5 A, VCC ≅ −50 V
Refer to the test circuit.
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
hFE2
M
40 to 80
L
60 to 120
K
100 to 200
TYPICAL CHARACTERISTICS (Ta = 25°C)
2SA1010
MIN.
−100
−100
TYP.
MAX.
Unit
V
V
−100
V
−10 µA
−1.0 mA
−10 µA
−1.0 mA
−10 µA
40 200
40 200
20
−0.6 V
−1.5 V
0.5 µs
1.5 µs
0.5 µs
2 mm aluminum board,
no insulating board,
grease coating, natural
air cooling
With infinite heatsink
Ambient Temperature Ta (°C)
Collector to Emitter Voltage VCE (V)
2 Data Sheet D16118EJ2V0DS
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2SA1010
Case Temperature TC (°C)
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Collector Current IC (A)
Data Sheet D16118EJ2V0DS
3
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