|
|
Número de pieza | 2SA0886 | |
Descripción | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SA0886 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1847
■ Features
• Output of 4 W can be obtained by a complementary pair with
2SC1847
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−50
−40
−5
−1.5
−3
1.2
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1 1.76±0.1
1: Emitter
123
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Conditions
IC = −1 mA, IE = 0
IC = −2 mA, IB = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 A
IC = −1.5 A, IB = − 0.15 A
IC = −2 A, IB = − 0.2 A
VCB = −5 V, IE = 0.5 A, f = 200 MHz
VCB = −20 V, IE = 0, f = 1 MHz
Min Typ Max Unit
−50 V
−40 V
−1 µA
−100 µA
−10 µA
80 220
−1.0 V
−1.5 V
150 MHz
45 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE1
80 to 160
120 to 220
Publication date: February 2003
Note) The part numbers in the parenthesis show conventional part number.
SJD00003BED
1
1 page This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet 2SA0886.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SA0885 | Silicon PNP Epitaxial Transistor | Panasonic Semiconductor |
2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) | Panasonic Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |