2PD602AQ PDF даташит
Спецификация 2PD602AQ изготовлена «NXP Semiconductors» и имеет функцию, называемую «NPN general purpose transistor». |
|
Детали детали
Номер произв | 2PD602AQ |
Описание | NPN general purpose transistor |
Производители | NXP Semiconductors |
логотип |
8 Pages
No Preview Available ! |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
2PD602A
NPN general purpose transistor
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 23
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistor
Product specification
2PD602A
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in an SC-59 plastic package.
PNP complement: 2PB710A.
MARKING
TYPE NUMBER
2PD602AQ
2PD602AR
2PD602AS
MARKING CODE
XQ
XR
XS
handbook, halfpage
3
1
Top view
2
3
1
2
MAM321
Fig.1 Simplified outline (SC-59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
60
50
5
500
1
200
250
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
1999 Apr 23
2
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistor
Product specification
2PD602A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PD602AQ
2PD602AR
2PD602AS
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
2PD602AQ
2PD602AR
2PD602AS
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 150 mA; VCE = 10 V; note 1
IC = 500 mA; VCE = 10 V; note 1
IC = 300 mA; IB = 30 mA; note 1
MIN.
−
−
−
85
120
170
40
−
MAX.
10
5
10
UNIT
nA
µA
nA
170
240
340
−
600 mV
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 50 mA; VCE = 10 V;
f = 100 MHz; note 1
−
140
160
180
15
−
−
−
pF
MHz
MHz
MHz
1999 Apr 23
3
Скачать PDF:
[ 2PD602AQ.PDF Даташит ]
Номер в каталоге | Описание | Производители |
2PD602A | NPN general purpose transistor | NXP Semiconductors |
2PD602AQ | NPN general purpose transistor | NXP Semiconductors |
2PD602AQL | 500 mA NPN general-purpose transistors | NXP Semiconductors |
2PD602AR | NPN general purpose transistor | NXP Semiconductors |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |