DataSheet26.com

2PD602A PDF даташит

Спецификация 2PD602A изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «NPN general purpose transistor».

Детали детали

Номер произв 2PD602A
Описание NPN general purpose transistor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

8 Pages
scroll

No Preview Available !

2PD602A Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
2PD602A
NPN general purpose transistor
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 23









No Preview Available !

2PD602A Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose transistor
Product specification
2PD602A
FEATURES
High current (max. 500 mA)
Low voltage (max. 50 V).
APPLICATIONS
General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in an SC-59 plastic package.
PNP complement: 2PB710A.
MARKING
TYPE NUMBER
2PD602AQ
2PD602AR
2PD602AS
MARKING CODE
XQ
XR
XS
handbook, halfpage
3
1
Top view
2
3
1
2
MAM321
Fig.1 Simplified outline (SC-59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
60
50
5
500
1
200
250
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
1999 Apr 23
2









No Preview Available !

2PD602A Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose transistor
Product specification
2PD602A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PD602AQ
2PD602AR
2PD602AS
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
2PD602AQ
2PD602AR
2PD602AS
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 150 mA; VCE = 10 V; note 1
IC = 500 mA; VCE = 10 V; note 1
IC = 300 mA; IB = 30 mA; note 1
MIN.
85
120
170
40
MAX.
10
5
10
UNIT
nA
µA
nA
170
240
340
600 mV
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 50 mA; VCE = 10 V;
f = 100 MHz; note 1
140
160
180
15
pF
MHz
MHz
MHz
1999 Apr 23
3










Скачать PDF:

[ 2PD602A.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
2PD602ANPN general purpose transistorNXP Semiconductors
NXP Semiconductors
2PD602AQNPN general purpose transistorNXP Semiconductors
NXP Semiconductors
2PD602AQL500 mA NPN general-purpose transistorsNXP Semiconductors
NXP Semiconductors
2PD602ARNPN general purpose transistorNXP Semiconductors
NXP Semiconductors

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск