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2PD1820AS PDF даташит

Спецификация 2PD1820AS изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «NPN general purpose transistor».

Детали детали

Номер произв 2PD1820AS
Описание NPN general purpose transistor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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2PD1820AS Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
2PD1820A
NPN general purpose transistor
Product specification
Supersedes data of 1997 May 22
1999 Apr 12









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2PD1820AS Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose transistor
Product specification
2PD1820A
FEATURES
High current (max. 500 mA)
Low voltage (max. 50 V)
Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
General purpose switching and amplification, especially
for portable equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package.
PNP complement: 2PB1219A.
MARKING
TYPE NUMBER
2PD1820AQ
2PD1820AR
2PD1820AS
MARKING CODE(1)
AQ
AR
AS
Note
1. = - : Made in Hong Kong.
= t : Made in Malaysia.
handbook, halfpage
1
Top view
3
1
2
MAM336
3
2
Fig.1 Simplified outline (SC-70; SOT323) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
60 V
50 V
5V
500 mA
1A
200 mA
200 mW
65 +150 °C
150 °C
65 +150 °C
1999 Apr 12
2









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2PD1820AS Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose transistor
Product specification
2PD1820A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
hFE
VCEsat
Cc
fT
collector cut-off current
emitter cut-off current
DC current gain
2PD1820AQ
2PD1820AR
2PD1820AS
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 150 mA; VCE = 10 V; note 1
85
120
170
IC = 500 mA; VCE = 10 V; note 1
IC = 300 mA; IB = 30 mA; note 1
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 50 mA; VCE = 10 V; f = 100 MHz;
note 1
40
150
MAX.
10
5
10
UNIT
nA
µA
nA
170
240
340
600 mV
15 pF
MHz
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
1999 Apr 12
3










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Номер в каталогеОписаниеПроизводители
2PD1820ANPN general purpose transistorNXP Semiconductors
NXP Semiconductors
2PD1820AQNPN general purpose transistorNXP Semiconductors
NXP Semiconductors
2PD1820ARNPN general purpose transistorNXP Semiconductors
NXP Semiconductors
2PD1820ASNPN general purpose transistorNXP Semiconductors
NXP Semiconductors

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