2PD1820AS PDF даташит
Спецификация 2PD1820AS изготовлена «NXP Semiconductors» и имеет функцию, называемую «NPN general purpose transistor». |
|
Детали детали
Номер произв | 2PD1820AS |
Описание | NPN general purpose transistor |
Производители | NXP Semiconductors |
логотип |
8 Pages
No Preview Available ! |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
2PD1820A
NPN general purpose transistor
Product specification
Supersedes data of 1997 May 22
1999 Apr 12
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistor
Product specification
2PD1820A
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V)
• Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
• General purpose switching and amplification, especially
for portable equipment.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package.
PNP complement: 2PB1219A.
MARKING
TYPE NUMBER
2PD1820AQ
2PD1820AR
2PD1820AS
MARKING CODE(1)
A∗Q
A∗R
A∗S
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
1
Top view
3
1
2
MAM336
3
2
Fig.1 Simplified outline (SC-70; SOT323) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
− 60 V
− 50 V
−5V
− 500 mA
−1A
− 200 mA
− 200 mW
−65 +150 °C
− 150 °C
−65 +150 °C
1999 Apr 12
2
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistor
Product specification
2PD1820A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
hFE
VCEsat
Cc
fT
collector cut-off current
emitter cut-off current
DC current gain
2PD1820AQ
2PD1820AR
2PD1820AS
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 150 mA; VCE = 10 V; note 1
−
−
−
85
120
170
IC = 500 mA; VCE = 10 V; note 1
IC = 300 mA; IB = 30 mA; note 1
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 50 mA; VCE = 10 V; f = 100 MHz;
note 1
40
−
−
150
MAX.
10
5
10
UNIT
nA
µA
nA
170
240
340
−
600 mV
15 pF
− MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 12
3
Скачать PDF:
[ 2PD1820AS.PDF Даташит ]
Номер в каталоге | Описание | Производители |
2PD1820A | NPN general purpose transistor | NXP Semiconductors |
2PD1820AQ | NPN general purpose transistor | NXP Semiconductors |
2PD1820AR | NPN general purpose transistor | NXP Semiconductors |
2PD1820AS | NPN general purpose transistor | NXP Semiconductors |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |