2PC4617R PDF даташит
Спецификация 2PC4617R изготовлена «NXP Semiconductors» и имеет функцию, называемую «NPN general purpose transistor». |
|
Детали детали
Номер произв | 2PC4617R |
Описание | NPN general purpose transistor |
Производители | NXP Semiconductors |
логотип |
8 Pages
No Preview Available ! |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
2PC4617
NPN general purpose transistor
Product specification
Supersedes data of 1998 Jul 21
1999 May 21
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistor
Product specification
2PC4617
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification in
communication, electronic data processing (EDP) and
consumer applications.
DESCRIPTION
NPN transistor in an SC-75 plastic package.
PNP complement: 2PA1774.
MARKING
TYPE NUMBER
2PC4617Q
2PC4617R
2PC4617S
MARKING CODE
ZQ
ZR
ZS
PINNING
PIN
1
2
3
DESCRIPTION
base
emitter
collector
handbook, halfpage
3
1
Top view
2
3
1
2
MAM348
Fig.1 Simplified outline (SC-75) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
50
50
5
100
200
200
150
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 May 21
2
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistor
Product specification
2PC4617
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
833
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
Cc
fT
collector cut-off current
emitter cut-off current
DC current gain
2PC4617
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 1 mA; VCE = 6 V; note 1
−
−
−
120
2PC4617Q
120
2PC4617R
180
2PC4617S
270
collector-emitter saturation voltage
collector capacitance
transition frequency
IC = 50 mA; IB = 5 mA; note 1
IE = ie = 0; VCB = 12 V; f = 1 MHz
IC = 2 mA; VCE = 12 V; f = 100 MHz;
note 1
−
−
100
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
100
5
100
560
270
390
560
200
1.5
−
UNIT
nA
µA
nA
mV
pF
MHz
1999 May 21
3
Скачать PDF:
[ 2PC4617R.PDF Даташит ]
Номер в каталоге | Описание | Производители |
2PC4617 | NPN general purpose transistor | NXP Semiconductors |
2PC4617J | NPN general purpose transistor | NXP Semiconductors |
2PC4617JQ | NPN general purpose transistor | NXP Semiconductors |
2PC4617JR | NPN general purpose transistor | NXP Semiconductors |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |