2PC4617JS PDF даташит
Спецификация 2PC4617JS изготовлена «NXP Semiconductors» и имеет функцию, называемую «NPN general purpose transistor». |
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Детали детали
Номер произв | 2PC4617JS |
Описание | NPN general purpose transistor |
Производители | NXP Semiconductors |
логотип |
8 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
2PC4617J
NPN general purpose transistor
Preliminary specification
Supersedes data of 1998 Nov 10
1999 May 04
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistor
Preliminary specification
2PC4617J
FEATURES
• Power dissipation comparable to SOT23
• Low output capacitance
• Low saturation voltage VCEsat
• Low current (max. 100 mA)
• Low voltage (max. 50 V).
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
APPLICATIONS
• General purpose switching and amplification in
miniaturized application areas such as telecom and
multimedia.
DESCRIPTION
NPN transistor encapsulated in an ultra small plastic
SMD SC-89 (SOT490) package.
PNP complement: 2PA1774J.
handbook, halfpage
3
1
Top view
1
2
MAM410
3
2
MARKING
TYPE NUMBER
2PC4617JQ
2PC4617JR
2PC4617JS
MARKING CODE
ZQ
ZR
ZS
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
50
50
5
100
200
200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 May 04
2
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistor
Preliminary specification
2PC4617J
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air; note 1
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
MAX.
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PC4617JQ
2PC4617JR
2PC4617JS
collector-emitter saturation
voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 1 mA; VCE = 6 V; note 1
IC = 50 mA; IB = 5 mA; note 1
MIN.
−
−
−
MAX.
100
5
100
UNIT
nA
µA
nA
120 270
180 390
270 560
− 200 mV
IE = ie = 0; VCB = 12 V; f = 1 MHz −
IC = 2 mA; VCE = 12 V; f = 100 MHz; 100
note 1
1.5
−
pF
MHz
1999 May 04
3
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Номер в каталоге | Описание | Производители |
2PC4617J | NPN general purpose transistor | NXP Semiconductors |
2PC4617JQ | NPN general purpose transistor | NXP Semiconductors |
2PC4617JR | NPN general purpose transistor | NXP Semiconductors |
2PC4617JS | NPN general purpose transistor | NXP Semiconductors |
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