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2PC4617JS PDF даташит

Спецификация 2PC4617JS изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «NPN general purpose transistor».

Детали детали

Номер произв 2PC4617JS
Описание NPN general purpose transistor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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2PC4617JS Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
2PC4617J
NPN general purpose transistor
Preliminary specification
Supersedes data of 1998 Nov 10
1999 May 04









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2PC4617JS Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose transistor
Preliminary specification
2PC4617J
FEATURES
Power dissipation comparable to SOT23
Low output capacitance
Low saturation voltage VCEsat
Low current (max. 100 mA)
Low voltage (max. 50 V).
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
APPLICATIONS
General purpose switching and amplification in
miniaturized application areas such as telecom and
multimedia.
DESCRIPTION
NPN transistor encapsulated in an ultra small plastic
SMD SC-89 (SOT490) package.
PNP complement: 2PA1774J.
handbook, halfpage
3
1
Top view
1
2
MAM410
3
2
MARKING
TYPE NUMBER
2PC4617JQ
2PC4617JR
2PC4617JS
MARKING CODE
ZQ
ZR
ZS
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
MIN.
65
65
MAX.
50
50
5
100
200
200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 May 04
2









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2PC4617JS Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose transistor
Preliminary specification
2PC4617J
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air; note 1
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
MAX.
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PC4617JQ
2PC4617JR
2PC4617JS
collector-emitter saturation
voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 1 mA; VCE = 6 V; note 1
IC = 50 mA; IB = 5 mA; note 1
MIN.
MAX.
100
5
100
UNIT
nA
µA
nA
120 270
180 390
270 560
200 mV
IE = ie = 0; VCB = 12 V; f = 1 MHz
IC = 2 mA; VCE = 12 V; f = 100 MHz; 100
note 1
1.5
pF
MHz
1999 May 04
3










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Номер в каталогеОписаниеПроизводители
2PC4617JNPN general purpose transistorNXP Semiconductors
NXP Semiconductors
2PC4617JQNPN general purpose transistorNXP Semiconductors
NXP Semiconductors
2PC4617JRNPN general purpose transistorNXP Semiconductors
NXP Semiconductors
2PC4617JSNPN general purpose transistorNXP Semiconductors
NXP Semiconductors

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