2PC4081S PDF даташит
Спецификация 2PC4081S изготовлена «NXP Semiconductors» и имеет функцию, называемую «NPN general purpose transistor». |
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Детали детали
Номер произв | 2PC4081S |
Описание | NPN general purpose transistor |
Производители | NXP Semiconductors |
логотип |
8 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
2PC4081
NPN general purpose transistor
Product specification
Supersedes data of 1997 Jul 04
1999 Apr 08
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistor
Product specification
2PC4081
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• General purpose switching
• Small signal amplification.
DESCRIPTION
NPN transistor in an SC-70 plastic package.
PNP complement: 2PA1576.
MARKING
TYPE NUMBER
2PC4081Q
2PC4081R
2PC4081S
MARKING CODE (1)
Z∗Q
Z∗R
Z∗S
Note
1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
1
Top view
1
2
MAM062
3
2
Fig.1 Simplified outline (SC-70) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
50
40
5
100
200
200
200
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 08
2
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistor
Product specification
2PC4081
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
collector cut-off current
emitter cut-off current
DC current gain
2PC4081Q
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 1 mA; VCE = 6 V
−
−
−
120
2PC4081R
180
2PC4081S
270
VCEsat
Cc
fT
collector-emitter saturation voltage IC = 50 mA; IB = 5 mA; note 1
−
collector capacitance
IE = ie = 0; VCB = 12 V; f = 1 MHz −
transition frequency
IC = 2 mA; VCE = 12 V; f = 100 MHz 100
TYP.
−
−
−
−
−
−
−
2
−
MAX. UNIT
100 nA
5 µA
100 nA
270
390
560
400 mV
3.5 pF
− MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 08
3
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Номер в каталоге | Описание | Производители |
2PC4081 | NPN general purpose transistor | NXP Semiconductors |
2PC4081Q | NPN general purpose transistor | NXP Semiconductors |
2PC4081R | NPN general purpose transistor | NXP Semiconductors |
2PC4081S | NPN general purpose transistor | NXP Semiconductors |
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