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2PC4081S PDF даташит

Спецификация 2PC4081S изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «NPN general purpose transistor».

Детали детали

Номер произв 2PC4081S
Описание NPN general purpose transistor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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2PC4081S Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
2PC4081
NPN general purpose transistor
Product specification
Supersedes data of 1997 Jul 04
1999 Apr 08









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2PC4081S Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose transistor
Product specification
2PC4081
FEATURES
Low current (max. 100 mA)
Low voltage (max. 40 V).
APPLICATIONS
General purpose switching
Small signal amplification.
DESCRIPTION
NPN transistor in an SC-70 plastic package.
PNP complement: 2PA1576.
MARKING
TYPE NUMBER
2PC4081Q
2PC4081R
2PC4081S
MARKING CODE (1)
ZQ
ZR
ZS
Note
1. = -: Made in Hong Kong.
= t: Made in Malaysia.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
1
Top view
1
2
MAM062
3
2
Fig.1 Simplified outline (SC-70) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
50
40
5
100
200
200
200
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 08
2









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2PC4081S Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose transistor
Product specification
2PC4081
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
collector cut-off current
emitter cut-off current
DC current gain
2PC4081Q
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 1 mA; VCE = 6 V
120
2PC4081R
180
2PC4081S
270
VCEsat
Cc
fT
collector-emitter saturation voltage IC = 50 mA; IB = 5 mA; note 1
collector capacitance
IE = ie = 0; VCB = 12 V; f = 1 MHz
transition frequency
IC = 2 mA; VCE = 12 V; f = 100 MHz 100
TYP.
2
MAX. UNIT
100 nA
5 µA
100 nA
270
390
560
400 mV
3.5 pF
MHz
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
1999 Apr 08
3










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Номер в каталогеОписаниеПроизводители
2PC4081NPN general purpose transistorNXP Semiconductors
NXP Semiconductors
2PC4081QNPN general purpose transistorNXP Semiconductors
NXP Semiconductors
2PC4081RNPN general purpose transistorNXP Semiconductors
NXP Semiconductors
2PC4081SNPN general purpose transistorNXP Semiconductors
NXP Semiconductors

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