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2PC1815Y PDF даташит

Спецификация 2PC1815Y изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «NPN general purpose transistor».

Детали детали

Номер произв 2PC1815Y
Описание NPN general purpose transistor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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2PC1815Y Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2PC1815
NPN general purpose transistor
Product specification
Supersedes data of 1997 Mar 28
1999 May 28









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2PC1815Y Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose transistor
Product specification
2PC1815
FEATURES
Low current (max. 150 mA)
Low voltage (max. 50 V).
APPLICATIONS
General purpose switching and amplification,
e.g. audio amplifier driver stages.
DESCRIPTION
NPN transistor in a TO-92 (SOT54) plastic package.
PNP complement: 2PA1015.
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
handbook, halfpage1
2
3
1
MAM259
2
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
60
50
5
150
200
200
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 May 28
2









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2PC1815Y Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose transistor
Product specification
2PC1815
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
hFE
VCEsat
VBEsat
Cc
fT
F
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
2PC1815
IE = 0; VCB = 60 V
IC = 0; VEB = 5 V
IC = 150 mA; VCE = 6 V
IC = 2 mA; VCE = 6 V
25
120
2PC1815Y
120
2PC1815GR
200
2PC1815BL
350
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
noise figure
IC = 100 mA; IB = 10 mA
IC = 100 mA; IB = 10 mA
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 1 mA; VCE = 6 V; f = 100 MHz
IC = 200 µA; VCE = 5 V;
RS = 2 k ; f = 1 kHz
80
2.5
100 nA
100 nA
700
240
400
700
300 mV
1.1 V
3.5 pF
MHz
10 dB
1999 May 28
3










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Номер в каталогеОписаниеПроизводители
2PC1815NPN general purpose transistorNXP Semiconductors
NXP Semiconductors
2PC1815BLNPN general purpose transistorNXP Semiconductors
NXP Semiconductors
2PC1815GRNPN general purpose transistorNXP Semiconductors
NXP Semiconductors
2PC1815YNPN general purpose transistorNXP Semiconductors
NXP Semiconductors

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