2PC1815Y PDF даташит
Спецификация 2PC1815Y изготовлена «NXP Semiconductors» и имеет функцию, называемую «NPN general purpose transistor». |
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Детали детали
Номер произв | 2PC1815Y |
Описание | NPN general purpose transistor |
Производители | NXP Semiconductors |
логотип |
8 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2PC1815
NPN general purpose transistor
Product specification
Supersedes data of 1997 Mar 28
1999 May 28
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistor
Product specification
2PC1815
FEATURES
• Low current (max. 150 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification,
e.g. audio amplifier driver stages.
DESCRIPTION
NPN transistor in a TO-92 (SOT54) plastic package.
PNP complement: 2PA1015.
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
handbook, halfpage1
2
3
1
MAM259
2
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
60
50
5
150
200
200
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 May 28
2
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistor
Product specification
2PC1815
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
hFE
VCEsat
VBEsat
Cc
fT
F
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
2PC1815
IE = 0; VCB = 60 V
IC = 0; VEB = 5 V
IC = 150 mA; VCE = 6 V
IC = 2 mA; VCE = 6 V
−
−
25
120
2PC1815Y
120
2PC1815GR
200
2PC1815BL
350
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
noise figure
IC = 100 mA; IB = 10 mA
IC = 100 mA; IB = 10 mA
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 1 mA; VCE = 6 V; f = 100 MHz
IC = 200 µA; VCE = 5 V;
RS = 2 k Ω; f = 1 kHz
−
−
−
80
−
−
−
−
−
−
−
−
−
−
2.5
−
−
100 nA
100 nA
−
700
240
400
700
300 mV
1.1 V
3.5 pF
− MHz
10 dB
1999 May 28
3
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Номер в каталоге | Описание | Производители |
2PC1815 | NPN general purpose transistor | NXP Semiconductors |
2PC1815BL | NPN general purpose transistor | NXP Semiconductors |
2PC1815GR | NPN general purpose transistor | NXP Semiconductors |
2PC1815Y | NPN general purpose transistor | NXP Semiconductors |
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