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2PB709AR PDF даташит

Спецификация 2PB709AR изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «PNP general purpose transistor».

Детали детали

Номер произв 2PB709AR
Описание PNP general purpose transistor
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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2PB709AR Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
2PB709A
PNP general purpose transistor
Product specification
Supersedes data of 1997 Jun 19
1999 Apr 23









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2PB709AR Даташит, Описание, Даташиты
Philips Semiconductors
PNP general purpose transistor
Product specification
2PB709A
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in an SC-59 plastic package.
NPN complement: 2PB601A.
MARKING
TYPE NUMBER
2PB709AQ
2PB709AR
2PB709AS
MARKING CODE
BQ
BR
BS
handbook, halfpage
3
1
Top view
2
3
1
2
MAM322
Fig.1 Simplified outline (SC-59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
45
45
6
100
200
100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 23
2









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2PB709AR Даташит, Описание, Даташиты
Philips Semiconductors
PNP general purpose transistor
Product specification
2PB709A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PB709AQ
2PB709AR
2PB709AS
collector-emitter saturation
voltage
collector capacitance
transition frequency
2PB709AQ
2PB709AR
2PB709AS
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 45 V
IE = 0; VCB = 45 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 2 mA; VCE = 10 V
IC = 100 mA; IB = 10 mA; note 1
MIN.
MAX.
10
5
10
UNIT
nA
µA
nA
160 260
210 340
290 460
− −500 mV
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 1 mA; VCE = 10 V; f = 100 MHz
60
70
80
5
pF
MHz
MHz
MHz
1999 Apr 23
3










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