2PB709AR PDF даташит
Спецификация 2PB709AR изготовлена «NXP Semiconductors» и имеет функцию, называемую «PNP general purpose transistor». |
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Детали детали
Номер произв | 2PB709AR |
Описание | PNP general purpose transistor |
Производители | NXP Semiconductors |
логотип |
8 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
2PB709A
PNP general purpose transistor
Product specification
Supersedes data of 1997 Jun 19
1999 Apr 23
No Preview Available ! |
Philips Semiconductors
PNP general purpose transistor
Product specification
2PB709A
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in an SC-59 plastic package.
NPN complement: 2PB601A.
MARKING
TYPE NUMBER
2PB709AQ
2PB709AR
2PB709AS
MARKING CODE
BQ
BR
BS
handbook, halfpage
3
1
Top view
2
3
1
2
MAM322
Fig.1 Simplified outline (SC-59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−45
−45
−6
−100
−200
−100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 23
2
No Preview Available ! |
Philips Semiconductors
PNP general purpose transistor
Product specification
2PB709A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PB709AQ
2PB709AR
2PB709AS
collector-emitter saturation
voltage
collector capacitance
transition frequency
2PB709AQ
2PB709AR
2PB709AS
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = −45 V
IE = 0; VCB = −45 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −2 mA; VCE = −10 V
IC = −100 mA; IB = −10 mA; note 1
MIN.
−
−
−
MAX.
−10
−5
−10
UNIT
nA
µA
nA
160 260
210 340
290 460
− −500 mV
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = −1 mA; VCE = −10 V; f = 100 MHz
−
60
70
80
5
−
−
−
pF
MHz
MHz
MHz
1999 Apr 23
3
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Номер в каталоге | Описание | Производители |
2PB709A | PNP general purpose transistor | NXP Semiconductors |
2PB709AQ | PNP general purpose transistor | NXP Semiconductors |
2PB709AR | PNP general purpose transistor | NXP Semiconductors |
2PB709AS | PNP general purpose transistor | NXP Semiconductors |
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